Low-temperature thermoelectric properties of Pb doped Cu2SnSe3

Shyam Prasad K, Ashok Rao, Bhasker Gahtori, Sivaiah Bathula, Ajay Dhar, Chia Chi Chang, Yung Kang Kuo

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Abstract

A series of Cu2Sn1-xPbxSe3 (0 ≤ x ≤ 0.04) compounds was prepared by solid state synthesis technique. The electrical resistivity (ρ) decreased with increase in Pb content up to x = 0.01, thereafter it increased with further increase in x (till x = 0.03). However, the lowest value of electrical resistivity is observed for Cu2Sn0.96Pb0.04Se3. Analysis of electrical resistivity of all the samples suggests that small poloron hoping model is operative in the high temperature regime while variable range hopping is effective in the low temperature regime. The positive Seebeck coefficient (S) for pristine and doped samples in the entire temperature range indicates that the majority charge carriers are holes. The electronic thermal conductivity (κe) of the Cu2Sn1-xPbxSe3 compounds was estimated by the Wiedemann-Franz law and found that the contribution from κe is less than 1% of the total thermal conductivity (κ). The highest ZT ~ 0.013 was achieved at 400 K for the sample Cu2Sn0.98Pb0.02Se3, about 30% enhancement as compared to the pristine sample.

Original languageEnglish
Pages (from-to)7-12
Number of pages6
JournalPhysica B: Condensed Matter
Volume520
DOIs
Publication statusPublished - 01-09-2017

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Thermal conductivity
electrical resistivity
thermal conductivity
Seebeck coefficient
Charge carriers
Temperature
Seebeck effect
charge carriers
solid state
augmentation
synthesis
electronics
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Prasad K, S., Rao, A., Gahtori, B., Bathula, S., Dhar, A., Chang, C. C., & Kuo, Y. K. (2017). Low-temperature thermoelectric properties of Pb doped Cu2SnSe3. Physica B: Condensed Matter, 520, 7-12. https://doi.org/10.1016/j.physb.2017.06.002
Prasad K, Shyam ; Rao, Ashok ; Gahtori, Bhasker ; Bathula, Sivaiah ; Dhar, Ajay ; Chang, Chia Chi ; Kuo, Yung Kang. / Low-temperature thermoelectric properties of Pb doped Cu2SnSe3. In: Physica B: Condensed Matter. 2017 ; Vol. 520. pp. 7-12.
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Prasad K, S, Rao, A, Gahtori, B, Bathula, S, Dhar, A, Chang, CC & Kuo, YK 2017, 'Low-temperature thermoelectric properties of Pb doped Cu2SnSe3', Physica B: Condensed Matter, vol. 520, pp. 7-12. https://doi.org/10.1016/j.physb.2017.06.002

Low-temperature thermoelectric properties of Pb doped Cu2SnSe3. / Prasad K, Shyam; Rao, Ashok; Gahtori, Bhasker; Bathula, Sivaiah; Dhar, Ajay; Chang, Chia Chi; Kuo, Yung Kang.

In: Physica B: Condensed Matter, Vol. 520, 01.09.2017, p. 7-12.

Research output: Contribution to journalArticle

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T1 - Low-temperature thermoelectric properties of Pb doped Cu2SnSe3

AU - Prasad K, Shyam

AU - Rao, Ashok

AU - Gahtori, Bhasker

AU - Bathula, Sivaiah

AU - Dhar, Ajay

AU - Chang, Chia Chi

AU - Kuo, Yung Kang

PY - 2017/9/1

Y1 - 2017/9/1

N2 - A series of Cu2Sn1-xPbxSe3 (0 ≤ x ≤ 0.04) compounds was prepared by solid state synthesis technique. The electrical resistivity (ρ) decreased with increase in Pb content up to x = 0.01, thereafter it increased with further increase in x (till x = 0.03). However, the lowest value of electrical resistivity is observed for Cu2Sn0.96Pb0.04Se3. Analysis of electrical resistivity of all the samples suggests that small poloron hoping model is operative in the high temperature regime while variable range hopping is effective in the low temperature regime. The positive Seebeck coefficient (S) for pristine and doped samples in the entire temperature range indicates that the majority charge carriers are holes. The electronic thermal conductivity (κe) of the Cu2Sn1-xPbxSe3 compounds was estimated by the Wiedemann-Franz law and found that the contribution from κe is less than 1% of the total thermal conductivity (κ). The highest ZT ~ 0.013 was achieved at 400 K for the sample Cu2Sn0.98Pb0.02Se3, about 30% enhancement as compared to the pristine sample.

AB - A series of Cu2Sn1-xPbxSe3 (0 ≤ x ≤ 0.04) compounds was prepared by solid state synthesis technique. The electrical resistivity (ρ) decreased with increase in Pb content up to x = 0.01, thereafter it increased with further increase in x (till x = 0.03). However, the lowest value of electrical resistivity is observed for Cu2Sn0.96Pb0.04Se3. Analysis of electrical resistivity of all the samples suggests that small poloron hoping model is operative in the high temperature regime while variable range hopping is effective in the low temperature regime. The positive Seebeck coefficient (S) for pristine and doped samples in the entire temperature range indicates that the majority charge carriers are holes. The electronic thermal conductivity (κe) of the Cu2Sn1-xPbxSe3 compounds was estimated by the Wiedemann-Franz law and found that the contribution from κe is less than 1% of the total thermal conductivity (κ). The highest ZT ~ 0.013 was achieved at 400 K for the sample Cu2Sn0.98Pb0.02Se3, about 30% enhancement as compared to the pristine sample.

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