Low threshold voltage ZnO thin film transistor with a Zn 0.7Mg0.3O gate dielectric for transparent electronics

Dhananjay, S. B. Krupanidhi

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

A highly transparent all ZnO thin film transistor (ZnO-TFT) with a transmittance of above 80% in the visible part of the spectrum, was fabricated by direct current magnetron sputtering, with a bottom gate configuration. The ZnO-TFT with undoped ZnO channel layers deposited on 300 nm Zn0.7 Mg0.3 O gate dielectric layers attains an on/off ratio of 104 and mobility of 20 cm2 V s. The capacitance-voltage (C-V) characteristics of the ZnO-TFT exhibited a transition from depletion to accumulation with a small hysteresis indicating the presence of oxide traps. The trap density was also computed from the Levinson's plot. The use of Zn0.7 Mg0.3 O as a dielectric layer adds additional dimension to its applications. The room temperature processing of the device depicts the possibility of the use of flexible substrates such as polymer substrates. The results provide the realization of transparent electronics for next-generation optoelectronics.

Original languageEnglish
Article number123717
JournalJournal of Applied Physics
Volume101
Issue number12
DOIs
Publication statusPublished - 03-08-2007

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threshold voltage
low voltage
transistors
thin films
electronics
traps
capacitance-voltage characteristics
transmittance
magnetron sputtering
depletion
plots
direct current
hysteresis
oxides
polymers
room temperature
configurations

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "A highly transparent all ZnO thin film transistor (ZnO-TFT) with a transmittance of above 80{\%} in the visible part of the spectrum, was fabricated by direct current magnetron sputtering, with a bottom gate configuration. The ZnO-TFT with undoped ZnO channel layers deposited on 300 nm Zn0.7 Mg0.3 O gate dielectric layers attains an on/off ratio of 104 and mobility of 20 cm2 V s. The capacitance-voltage (C-V) characteristics of the ZnO-TFT exhibited a transition from depletion to accumulation with a small hysteresis indicating the presence of oxide traps. The trap density was also computed from the Levinson's plot. The use of Zn0.7 Mg0.3 O as a dielectric layer adds additional dimension to its applications. The room temperature processing of the device depicts the possibility of the use of flexible substrates such as polymer substrates. The results provide the realization of transparent electronics for next-generation optoelectronics.",
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Low threshold voltage ZnO thin film transistor with a Zn 0.7Mg0.3O gate dielectric for transparent electronics. / Dhananjay; Krupanidhi, S. B.

In: Journal of Applied Physics, Vol. 101, No. 12, 123717, 03.08.2007.

Research output: Contribution to journalArticle

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AU - Dhananjay, null

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