Modeling of CMOS compatible ring resonator switch with intermediate vanadium oxide as the switching element

Mandeep Singh, Arnab Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, silicon based dual ring resonator with hybrid plasmonic bus waveguides (Cu-SiO2-Si-SiO2-Cu) is investigated for achieving switching in the telecommunication C-band (λ = 1.54-1.553μm). The switch element uses vanadium oxide (VO2) as the switching medium when inserted between the rings in order to tailor transmission from one ring to the other through heating induced phase transition. In this manner, the proposed switch element uses one vanadium oxide medium instead of refractive index tailoring of the whole ring as in the prior reported works and achieves switching response. From two-dimensional finite element analysis we have found that, the proposed switch can achieve maximum extinction ratio of 2.72 dB at λ = 1.5434μm, exclusively by tailoring VO2 phase. Furthermore, impact of aperture width, and gap (separation between the bus waveguide and rings) are investigated to gain insight on the improvement of extinction ratio. From our numerical simulations, we find that free spectral range (FSR) and figure of merit (Q) for OFF and ON states are (173.36 nm, 92.63), and (173.58 nm, 65.39), respectively.

Original languageEnglish
Title of host publication2nd International Conference on Condensed Matter and Applied Physics, ICC 2017
EditorsManoj Singh Shekhawat, Sudhir Bhardwaj, Bhuvneshwer Suthar
PublisherAmerican Institute of Physics Inc.
Volume1953
ISBN (Electronic)9780735416482
DOIs
Publication statusPublished - 08-05-2018
Event2nd International Conference on Condensed Matter and Applied Physics, ICC 2017 - Bikaner, India
Duration: 24-11-201725-11-2017

Conference

Conference2nd International Conference on Condensed Matter and Applied Physics, ICC 2017
CountryIndia
CityBikaner
Period24-11-1725-11-17

Fingerprint

switching circuits
vanadium oxides
CMOS
switches
resonators
rings
extinction
waveguides
C band
figure of merit
telecommunication
apertures
refractivity
heating
silicon
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Singh, M., & Datta, A. (2018). Modeling of CMOS compatible ring resonator switch with intermediate vanadium oxide as the switching element. In M. S. Shekhawat, S. Bhardwaj, & B. Suthar (Eds.), 2nd International Conference on Condensed Matter and Applied Physics, ICC 2017 (Vol. 1953). [060015] American Institute of Physics Inc.. https://doi.org/10.1063/1.5032746
Singh, Mandeep ; Datta, Arnab. / Modeling of CMOS compatible ring resonator switch with intermediate vanadium oxide as the switching element. 2nd International Conference on Condensed Matter and Applied Physics, ICC 2017. editor / Manoj Singh Shekhawat ; Sudhir Bhardwaj ; Bhuvneshwer Suthar. Vol. 1953 American Institute of Physics Inc., 2018.
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abstract = "In this paper, silicon based dual ring resonator with hybrid plasmonic bus waveguides (Cu-SiO2-Si-SiO2-Cu) is investigated for achieving switching in the telecommunication C-band (λ = 1.54-1.553μm). The switch element uses vanadium oxide (VO2) as the switching medium when inserted between the rings in order to tailor transmission from one ring to the other through heating induced phase transition. In this manner, the proposed switch element uses one vanadium oxide medium instead of refractive index tailoring of the whole ring as in the prior reported works and achieves switching response. From two-dimensional finite element analysis we have found that, the proposed switch can achieve maximum extinction ratio of 2.72 dB at λ = 1.5434μm, exclusively by tailoring VO2 phase. Furthermore, impact of aperture width, and gap (separation between the bus waveguide and rings) are investigated to gain insight on the improvement of extinction ratio. From our numerical simulations, we find that free spectral range (FSR) and figure of merit (Q) for OFF and ON states are (173.36 nm, 92.63), and (173.58 nm, 65.39), respectively.",
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Singh, M & Datta, A 2018, Modeling of CMOS compatible ring resonator switch with intermediate vanadium oxide as the switching element. in MS Shekhawat, S Bhardwaj & B Suthar (eds), 2nd International Conference on Condensed Matter and Applied Physics, ICC 2017. vol. 1953, 060015, American Institute of Physics Inc., 2nd International Conference on Condensed Matter and Applied Physics, ICC 2017, Bikaner, India, 24-11-17. https://doi.org/10.1063/1.5032746

Modeling of CMOS compatible ring resonator switch with intermediate vanadium oxide as the switching element. / Singh, Mandeep; Datta, Arnab.

2nd International Conference on Condensed Matter and Applied Physics, ICC 2017. ed. / Manoj Singh Shekhawat; Sudhir Bhardwaj; Bhuvneshwer Suthar. Vol. 1953 American Institute of Physics Inc., 2018. 060015.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - In this paper, silicon based dual ring resonator with hybrid plasmonic bus waveguides (Cu-SiO2-Si-SiO2-Cu) is investigated for achieving switching in the telecommunication C-band (λ = 1.54-1.553μm). The switch element uses vanadium oxide (VO2) as the switching medium when inserted between the rings in order to tailor transmission from one ring to the other through heating induced phase transition. In this manner, the proposed switch element uses one vanadium oxide medium instead of refractive index tailoring of the whole ring as in the prior reported works and achieves switching response. From two-dimensional finite element analysis we have found that, the proposed switch can achieve maximum extinction ratio of 2.72 dB at λ = 1.5434μm, exclusively by tailoring VO2 phase. Furthermore, impact of aperture width, and gap (separation between the bus waveguide and rings) are investigated to gain insight on the improvement of extinction ratio. From our numerical simulations, we find that free spectral range (FSR) and figure of merit (Q) for OFF and ON states are (173.36 nm, 92.63), and (173.58 nm, 65.39), respectively.

AB - In this paper, silicon based dual ring resonator with hybrid plasmonic bus waveguides (Cu-SiO2-Si-SiO2-Cu) is investigated for achieving switching in the telecommunication C-band (λ = 1.54-1.553μm). The switch element uses vanadium oxide (VO2) as the switching medium when inserted between the rings in order to tailor transmission from one ring to the other through heating induced phase transition. In this manner, the proposed switch element uses one vanadium oxide medium instead of refractive index tailoring of the whole ring as in the prior reported works and achieves switching response. From two-dimensional finite element analysis we have found that, the proposed switch can achieve maximum extinction ratio of 2.72 dB at λ = 1.5434μm, exclusively by tailoring VO2 phase. Furthermore, impact of aperture width, and gap (separation between the bus waveguide and rings) are investigated to gain insight on the improvement of extinction ratio. From our numerical simulations, we find that free spectral range (FSR) and figure of merit (Q) for OFF and ON states are (173.36 nm, 92.63), and (173.58 nm, 65.39), respectively.

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PB - American Institute of Physics Inc.

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Singh M, Datta A. Modeling of CMOS compatible ring resonator switch with intermediate vanadium oxide as the switching element. In Shekhawat MS, Bhardwaj S, Suthar B, editors, 2nd International Conference on Condensed Matter and Applied Physics, ICC 2017. Vol. 1953. American Institute of Physics Inc. 2018. 060015 https://doi.org/10.1063/1.5032746