Modeling of nanocluster carbon defect states & thin film transistor

N. Ramavenkateswaran, K. Sreelakshmi, Shounak De, B. S. Satyanarayana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nano cluster carbons in its various forms like carbon nanotubes, fullerene and graphene have become attractive material for a wide range of application. The uniqueness of this, material is its ability to bond in different ways, including sp3, sp2 and sp1 and also exist in mixed phase mode, thus leading to many interesting properties. Nanocluster carbon films with room temperature conductivity changing over 10 orders, from 10-11-1 cm-1) to 3 x 10-1-1 cm-1), defect state density varying from 1016 to 1021 cm-3 eV-1 were studied. The films also show some photo response. The material has been used to fabricate field assisted electron emitters, and to simulate thin film transistor and sensors. The pulsed cathodic arc seems to be a better process for controlled Nanoclusters growth than continuous cathodic arc. The DOS Model for non crystalline materials are simulated and properties are studied. The possibility of growing the material over large areas also enables us to use it for applications like sensors & medical implants on flexible substrates, and tribology.

Original languageEnglish
Title of host publication7th IEEE India International Conference on Power Electronics, IICPE 2016
PublisherIEEE Computer Society
Volume2016-November
ISBN (Electronic)9781509045303
DOIs
Publication statusPublished - 20-10-2017
Event7th IEEE India International Conference on Power Electronics, IICPE 2016 - Patiala, India
Duration: 17-11-201619-11-2016

Conference

Conference7th IEEE India International Conference on Power Electronics, IICPE 2016
CountryIndia
CityPatiala
Period17-11-1619-11-16

Fingerprint

Nanoclusters
Thin film transistors
Defects
Carbon
Carbon clusters
DOS
Tribology
Carbon films
Sensors
Fullerenes
Graphene
Carbon nanotubes
Crystalline materials
Electrons
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Ramavenkateswaran, N., Sreelakshmi, K., De, S., & Satyanarayana, B. S. (2017). Modeling of nanocluster carbon defect states & thin film transistor. In 7th IEEE India International Conference on Power Electronics, IICPE 2016 (Vol. 2016-November). [8079428] IEEE Computer Society. https://doi.org/10.1109/IICPE.2016.8079428
Ramavenkateswaran, N. ; Sreelakshmi, K. ; De, Shounak ; Satyanarayana, B. S. / Modeling of nanocluster carbon defect states & thin film transistor. 7th IEEE India International Conference on Power Electronics, IICPE 2016. Vol. 2016-November IEEE Computer Society, 2017.
@inproceedings{32627f5201bd4b8cb4a91594daef9194,
title = "Modeling of nanocluster carbon defect states & thin film transistor",
abstract = "Nano cluster carbons in its various forms like carbon nanotubes, fullerene and graphene have become attractive material for a wide range of application. The uniqueness of this, material is its ability to bond in different ways, including sp3, sp2 and sp1 and also exist in mixed phase mode, thus leading to many interesting properties. Nanocluster carbon films with room temperature conductivity changing over 10 orders, from 10-11 (Ō-1 cm-1) to 3 x 10-1 (Ō-1 cm-1), defect state density varying from 1016 to 1021 cm-3 eV-1 were studied. The films also show some photo response. The material has been used to fabricate field assisted electron emitters, and to simulate thin film transistor and sensors. The pulsed cathodic arc seems to be a better process for controlled Nanoclusters growth than continuous cathodic arc. The DOS Model for non crystalline materials are simulated and properties are studied. The possibility of growing the material over large areas also enables us to use it for applications like sensors & medical implants on flexible substrates, and tribology.",
author = "N. Ramavenkateswaran and K. Sreelakshmi and Shounak De and Satyanarayana, {B. S.}",
year = "2017",
month = "10",
day = "20",
doi = "10.1109/IICPE.2016.8079428",
language = "English",
volume = "2016-November",
booktitle = "7th IEEE India International Conference on Power Electronics, IICPE 2016",
publisher = "IEEE Computer Society",
address = "United States",

}

Ramavenkateswaran, N, Sreelakshmi, K, De, S & Satyanarayana, BS 2017, Modeling of nanocluster carbon defect states & thin film transistor. in 7th IEEE India International Conference on Power Electronics, IICPE 2016. vol. 2016-November, 8079428, IEEE Computer Society, 7th IEEE India International Conference on Power Electronics, IICPE 2016, Patiala, India, 17-11-16. https://doi.org/10.1109/IICPE.2016.8079428

Modeling of nanocluster carbon defect states & thin film transistor. / Ramavenkateswaran, N.; Sreelakshmi, K.; De, Shounak; Satyanarayana, B. S.

7th IEEE India International Conference on Power Electronics, IICPE 2016. Vol. 2016-November IEEE Computer Society, 2017. 8079428.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Modeling of nanocluster carbon defect states & thin film transistor

AU - Ramavenkateswaran, N.

AU - Sreelakshmi, K.

AU - De, Shounak

AU - Satyanarayana, B. S.

PY - 2017/10/20

Y1 - 2017/10/20

N2 - Nano cluster carbons in its various forms like carbon nanotubes, fullerene and graphene have become attractive material for a wide range of application. The uniqueness of this, material is its ability to bond in different ways, including sp3, sp2 and sp1 and also exist in mixed phase mode, thus leading to many interesting properties. Nanocluster carbon films with room temperature conductivity changing over 10 orders, from 10-11 (Ō-1 cm-1) to 3 x 10-1 (Ō-1 cm-1), defect state density varying from 1016 to 1021 cm-3 eV-1 were studied. The films also show some photo response. The material has been used to fabricate field assisted electron emitters, and to simulate thin film transistor and sensors. The pulsed cathodic arc seems to be a better process for controlled Nanoclusters growth than continuous cathodic arc. The DOS Model for non crystalline materials are simulated and properties are studied. The possibility of growing the material over large areas also enables us to use it for applications like sensors & medical implants on flexible substrates, and tribology.

AB - Nano cluster carbons in its various forms like carbon nanotubes, fullerene and graphene have become attractive material for a wide range of application. The uniqueness of this, material is its ability to bond in different ways, including sp3, sp2 and sp1 and also exist in mixed phase mode, thus leading to many interesting properties. Nanocluster carbon films with room temperature conductivity changing over 10 orders, from 10-11 (Ō-1 cm-1) to 3 x 10-1 (Ō-1 cm-1), defect state density varying from 1016 to 1021 cm-3 eV-1 were studied. The films also show some photo response. The material has been used to fabricate field assisted electron emitters, and to simulate thin film transistor and sensors. The pulsed cathodic arc seems to be a better process for controlled Nanoclusters growth than continuous cathodic arc. The DOS Model for non crystalline materials are simulated and properties are studied. The possibility of growing the material over large areas also enables us to use it for applications like sensors & medical implants on flexible substrates, and tribology.

UR - http://www.scopus.com/inward/record.url?scp=85039439821&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85039439821&partnerID=8YFLogxK

U2 - 10.1109/IICPE.2016.8079428

DO - 10.1109/IICPE.2016.8079428

M3 - Conference contribution

VL - 2016-November

BT - 7th IEEE India International Conference on Power Electronics, IICPE 2016

PB - IEEE Computer Society

ER -

Ramavenkateswaran N, Sreelakshmi K, De S, Satyanarayana BS. Modeling of nanocluster carbon defect states & thin film transistor. In 7th IEEE India International Conference on Power Electronics, IICPE 2016. Vol. 2016-November. IEEE Computer Society. 2017. 8079428 https://doi.org/10.1109/IICPE.2016.8079428