11 Citations (Scopus)

Abstract

Electrical conductivity measurements have been carried out on Nanocluster carbon thin films in the temperature range of 123K- 303K. These films are deposited onto silicon substrate by room tempearture based Cathodic Arc process. Extracted parameters and analysis of data verified that Mott's variable range hopping(VRH) conductivity describes the transport mechanism for Nanocluster carbon thin films in this temperature range.These also suggests that density of states at the fermi-level is constant at this temperature range. Typical density of states found to be 1.527×1017 cm-3 eV-1.

Original languageEnglish
Pages (from-to)1365-1367
Number of pages3
JournalOptoelectronics and Advanced Materials, Rapid Communications
Volume3
Issue number12
Publication statusPublished - 12-2009

Fingerprint

Nanoclusters
Carbon films
Thin films
Silicon
Fermi level
Temperature
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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title = "Mott conductivity in nanocluster carbon thin films",
abstract = "Electrical conductivity measurements have been carried out on Nanocluster carbon thin films in the temperature range of 123K- 303K. These films are deposited onto silicon substrate by room tempearture based Cathodic Arc process. Extracted parameters and analysis of data verified that Mott's variable range hopping(VRH) conductivity describes the transport mechanism for Nanocluster carbon thin films in this temperature range.These also suggests that density of states at the fermi-level is constant at this temperature range. Typical density of states found to be 1.527×1017 cm-3 eV-1.",
author = "Shounak De and S. Niranajana and Satyanarayana, {B. S.} and Mohan Rao",
year = "2009",
month = "12",
language = "English",
volume = "3",
pages = "1365--1367",
journal = "Optoelectronics and Advanced Materials, Rapid Communications",
issn = "1842-6573",
publisher = "National Institute of Optoelectronics",
number = "12",

}

Mott conductivity in nanocluster carbon thin films. / De, Shounak; Niranajana, S.; Satyanarayana, B. S.; Rao, Mohan.

In: Optoelectronics and Advanced Materials, Rapid Communications, Vol. 3, No. 12, 12.2009, p. 1365-1367.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Mott conductivity in nanocluster carbon thin films

AU - De, Shounak

AU - Niranajana, S.

AU - Satyanarayana, B. S.

AU - Rao, Mohan

PY - 2009/12

Y1 - 2009/12

N2 - Electrical conductivity measurements have been carried out on Nanocluster carbon thin films in the temperature range of 123K- 303K. These films are deposited onto silicon substrate by room tempearture based Cathodic Arc process. Extracted parameters and analysis of data verified that Mott's variable range hopping(VRH) conductivity describes the transport mechanism for Nanocluster carbon thin films in this temperature range.These also suggests that density of states at the fermi-level is constant at this temperature range. Typical density of states found to be 1.527×1017 cm-3 eV-1.

AB - Electrical conductivity measurements have been carried out on Nanocluster carbon thin films in the temperature range of 123K- 303K. These films are deposited onto silicon substrate by room tempearture based Cathodic Arc process. Extracted parameters and analysis of data verified that Mott's variable range hopping(VRH) conductivity describes the transport mechanism for Nanocluster carbon thin films in this temperature range.These also suggests that density of states at the fermi-level is constant at this temperature range. Typical density of states found to be 1.527×1017 cm-3 eV-1.

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M3 - Article

VL - 3

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JO - Optoelectronics and Advanced Materials, Rapid Communications

JF - Optoelectronics and Advanced Materials, Rapid Communications

SN - 1842-6573

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