Mott conductivity in nanocluster carbon thin films

Shounak De; S. Niranajana; B. S. Satyanarayana; Mohan Rao

Mott conductivity in nanocluster carbon thin films

Shounak De, S. Niranajana, B. S. Satyanarayana, Mohan Rao

Research output: Contribution to journal › Article › peer-review

Abstract

Electrical conductivity measurements have been carried out on Nanocluster carbon thin films in the temperature range of 123K- 303K. These films are deposited onto silicon substrate by room tempearture based Cathodic Arc process. Extracted parameters and analysis of data verified that Mott's variable range hopping(VRH) conductivity describes the transport mechanism for Nanocluster carbon thin films in this temperature range.These also suggests that density of states at the fermi-level is constant at this temperature range. Typical density of states found to be 1.527×10¹⁷ cm^-3 eV^-1.

Original language	English
Pages (from-to)	1365-1367
Number of pages	3
Journal	Optoelectronics and Advanced Materials, Rapid Communications
Volume	3
Issue number	12
Publication status	Published - 12-2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Mott conductivity in nanocluster carbon thin films",

abstract = "Electrical conductivity measurements have been carried out on Nanocluster carbon thin films in the temperature range of 123K- 303K. These films are deposited onto silicon substrate by room tempearture based Cathodic Arc process. Extracted parameters and analysis of data verified that Mott's variable range hopping(VRH) conductivity describes the transport mechanism for Nanocluster carbon thin films in this temperature range.These also suggests that density of states at the fermi-level is constant at this temperature range. Typical density of states found to be 1.527×1017 cm-3 eV-1.",

author = "Shounak De and S. Niranajana and Satyanarayana, {B. S.} and Mohan Rao",

year = "2009",

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T1 - Mott conductivity in nanocluster carbon thin films

AU - De, Shounak

AU - Niranajana, S.

AU - Satyanarayana, B. S.

AU - Rao, Mohan

PY - 2009/12

Y1 - 2009/12

N2 - Electrical conductivity measurements have been carried out on Nanocluster carbon thin films in the temperature range of 123K- 303K. These films are deposited onto silicon substrate by room tempearture based Cathodic Arc process. Extracted parameters and analysis of data verified that Mott's variable range hopping(VRH) conductivity describes the transport mechanism for Nanocluster carbon thin films in this temperature range.These also suggests that density of states at the fermi-level is constant at this temperature range. Typical density of states found to be 1.527×1017 cm-3 eV-1.

AB - Electrical conductivity measurements have been carried out on Nanocluster carbon thin films in the temperature range of 123K- 303K. These films are deposited onto silicon substrate by room tempearture based Cathodic Arc process. Extracted parameters and analysis of data verified that Mott's variable range hopping(VRH) conductivity describes the transport mechanism for Nanocluster carbon thin films in this temperature range.These also suggests that density of states at the fermi-level is constant at this temperature range. Typical density of states found to be 1.527×1017 cm-3 eV-1.

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M3 - Article

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JO - Optoelectronics and Advanced Materials, Rapid Communications

JF - Optoelectronics and Advanced Materials, Rapid Communications

IS - 12

ER -

Mott conductivity in nanocluster carbon thin films

Abstract

All Science Journal Classification (ASJC) codes

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