Electrical conductivity measurements have been carried out on Nanocluster carbon thin films in the temperature range of 123K- 303K. These films are deposited onto silicon substrate by room tempearture based Cathodic Arc process. Extracted parameters and analysis of data verified that Mott's variable range hopping(VRH) conductivity describes the transport mechanism for Nanocluster carbon thin films in this temperature range.These also suggests that density of states at the fermi-level is constant at this temperature range. Typical density of states found to be 1.527×1017 cm-3 eV-1.
|Number of pages||3|
|Journal||Optoelectronics and Advanced Materials, Rapid Communications|
|Publication status||Published - 12-2009|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering