n-Type naphthalimide-indole derivative for electronic applications

Yogeesh Mjp; Sneha Kagatikar; Dhanya Sunil; Dhananjaya Kekuda

doi:10.1007/s10854-023-09827-4

n-Type naphthalimide-indole derivative for electronic applications

Yogeesh Mjp, Sneha Kagatikar, Dhanya Sunil, Dhananjaya Kekuda

Research output: Contribution to journal › Article › peer-review

Abstract

The fabrication of diodes using organic semiconductors as active materials has gained wide interest, and has undergone significant progress in the past few decades. A naphthalimide-indole derivative (BNIA) was synthesized through bromination of acenaphthene, subsequent oxidation, and finally imidation with indole-3-acetic anhydride. The molecular structure was characterized using NMR and IR spectroscopy. The BNIA displayed good thermal stability up to 300 °C and an electrochemical band gap of 1.07 eV. The theoretical studies were performed to support the experimental findings. The electrical parameter values and the dielectric measurement studies directed towards the suitability of BNIA as a functional material in electronic devices. A diode was successfully constructed using BNIA as the n-type material with an ideality factor of 8.13, and the electrical parameters are analyzed.

Original language	English
Article number	334
Journal	Journal of Materials Science: Materials in Electronics
Volume	34
Issue number	4
DOIs	https://doi.org/10.1007/s10854-023-09827-4
Publication status	Published - 02-2023

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1007/s10854-023-09827-4

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title = "n-Type naphthalimide-indole derivative for electronic applications",

abstract = "The fabrication of diodes using organic semiconductors as active materials has gained wide interest, and has undergone significant progress in the past few decades. A naphthalimide-indole derivative (BNIA) was synthesized through bromination of acenaphthene, subsequent oxidation, and finally imidation with indole-3-acetic anhydride. The molecular structure was characterized using NMR and IR spectroscopy. The BNIA displayed good thermal stability up to 300 °C and an electrochemical band gap of 1.07 eV. The theoretical studies were performed to support the experimental findings. The electrical parameter values and the dielectric measurement studies directed towards the suitability of BNIA as a functional material in electronic devices. A diode was successfully constructed using BNIA as the n-type material with an ideality factor of 8.13, and the electrical parameters are analyzed.",

author = "Yogeesh Mjp and Sneha Kagatikar and Dhanya Sunil and Dhananjaya Kekuda",

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T1 - n-Type naphthalimide-indole derivative for electronic applications

AU - Mjp, Yogeesh

AU - Kagatikar, Sneha

AU - Sunil, Dhanya

AU - Kekuda, Dhananjaya

PY - 2023/2

Y1 - 2023/2

N2 - The fabrication of diodes using organic semiconductors as active materials has gained wide interest, and has undergone significant progress in the past few decades. A naphthalimide-indole derivative (BNIA) was synthesized through bromination of acenaphthene, subsequent oxidation, and finally imidation with indole-3-acetic anhydride. The molecular structure was characterized using NMR and IR spectroscopy. The BNIA displayed good thermal stability up to 300 °C and an electrochemical band gap of 1.07 eV. The theoretical studies were performed to support the experimental findings. The electrical parameter values and the dielectric measurement studies directed towards the suitability of BNIA as a functional material in electronic devices. A diode was successfully constructed using BNIA as the n-type material with an ideality factor of 8.13, and the electrical parameters are analyzed.

AB - The fabrication of diodes using organic semiconductors as active materials has gained wide interest, and has undergone significant progress in the past few decades. A naphthalimide-indole derivative (BNIA) was synthesized through bromination of acenaphthene, subsequent oxidation, and finally imidation with indole-3-acetic anhydride. The molecular structure was characterized using NMR and IR spectroscopy. The BNIA displayed good thermal stability up to 300 °C and an electrochemical band gap of 1.07 eV. The theoretical studies were performed to support the experimental findings. The electrical parameter values and the dielectric measurement studies directed towards the suitability of BNIA as a functional material in electronic devices. A diode was successfully constructed using BNIA as the n-type material with an ideality factor of 8.13, and the electrical parameters are analyzed.

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ER -

n-Type naphthalimide-indole derivative for electronic applications

Abstract

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