n-ZnO/p-CuZnS heterostructure deposited by spray pyrolysis for photosensor application in the UV region

V. S. Ganesha Krishna, M. G. Mahesha

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1 Citation (Scopus)

Abstract

In this work, n-ZnO/p-CuZnS heterojunction-based UV photodetector is fabricated using the spray pyrolysis technique. The current-voltage (I-V) characterization under dark condition demonstrated good rectifying behavior. For the fixed bias voltage, upon illumination with UV light (wavelength, λ = 385 nm), the current has increased. At 1 V bias, a responsivity of 0.255 A/W was recorded. Using the thermionic emission (TE) and Chueng models, the carrier transport properties of the photodetector were explained. Upon illumination, barrier height decreased from 0.89 to 0.79. Low-temperature Raman analysis was carried out to investigate the temperature-dependent strain between the layers. Photoluminescence study employed for defect analysis showed suppressed emissions indicating better absorption

Original languageEnglish
Article number113169
JournalSensors and Actuators A: Physical
Volume332
DOIs
Publication statusPublished - 01-12-2021

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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