Nanocluster carbon thin film as a semiconducting layer and feasibility for device application

Nilabh Gaurav, Saransh Bhatnagar, Ravi Raj, Shounak De, S. Niranjana, B. S. Satyanarayana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nanocluster Carbon thin films have been seen as an alternative semiconducting layer to a-Si: H. Amorphous and polycrystalline hydrogenated silicon are used as an active channel layer for the thin film transistors (TFTs) for long time. But these materials are fabricated at high temperatures. In this paper, we describe Nanocluster carbon thin films as alternative materials for the TFT device application. We present numerical simulations of the TFT, using the Semiconductor device simulator ATLAS from silvaco. We study the ON/OFF ratio of the Nanocluster carbon thin film based TFT.

Original languageEnglish
Title of host publicationProceedings of the 2008 International Conference on Computing, Communication and Networking, ICCCN 2008
DOIs
Publication statusPublished - 2008
Event2008 International Conference on Computing, Communication and Networking, ICCCN 2008 - Karur, Tamil Nadu, India
Duration: 18-12-200820-12-2008

Conference

Conference2008 International Conference on Computing, Communication and Networking, ICCCN 2008
CountryIndia
CityKarur, Tamil Nadu
Period18-12-0820-12-08

Fingerprint

Nanoclusters
Carbon films
Thin film transistors
Thin films
Semiconductor devices
Simulators
Silicon
Computer simulation
Temperature

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Gaurav, N., Bhatnagar, S., Raj, R., De, S., Niranjana, S., & Satyanarayana, B. S. (2008). Nanocluster carbon thin film as a semiconducting layer and feasibility for device application. In Proceedings of the 2008 International Conference on Computing, Communication and Networking, ICCCN 2008 [4787738] https://doi.org/10.1109/ICCCNET.2008.4787738
Gaurav, Nilabh ; Bhatnagar, Saransh ; Raj, Ravi ; De, Shounak ; Niranjana, S. ; Satyanarayana, B. S. / Nanocluster carbon thin film as a semiconducting layer and feasibility for device application. Proceedings of the 2008 International Conference on Computing, Communication and Networking, ICCCN 2008. 2008.
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Gaurav, N, Bhatnagar, S, Raj, R, De, S, Niranjana, S & Satyanarayana, BS 2008, Nanocluster carbon thin film as a semiconducting layer and feasibility for device application. in Proceedings of the 2008 International Conference on Computing, Communication and Networking, ICCCN 2008., 4787738, 2008 International Conference on Computing, Communication and Networking, ICCCN 2008, Karur, Tamil Nadu, India, 18-12-08. https://doi.org/10.1109/ICCCNET.2008.4787738

Nanocluster carbon thin film as a semiconducting layer and feasibility for device application. / Gaurav, Nilabh; Bhatnagar, Saransh; Raj, Ravi; De, Shounak; Niranjana, S.; Satyanarayana, B. S.

Proceedings of the 2008 International Conference on Computing, Communication and Networking, ICCCN 2008. 2008. 4787738.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Nanocluster carbon thin film as a semiconducting layer and feasibility for device application

AU - Gaurav, Nilabh

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AU - Satyanarayana, B. S.

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N2 - Nanocluster Carbon thin films have been seen as an alternative semiconducting layer to a-Si: H. Amorphous and polycrystalline hydrogenated silicon are used as an active channel layer for the thin film transistors (TFTs) for long time. But these materials are fabricated at high temperatures. In this paper, we describe Nanocluster carbon thin films as alternative materials for the TFT device application. We present numerical simulations of the TFT, using the Semiconductor device simulator ATLAS from silvaco. We study the ON/OFF ratio of the Nanocluster carbon thin film based TFT.

AB - Nanocluster Carbon thin films have been seen as an alternative semiconducting layer to a-Si: H. Amorphous and polycrystalline hydrogenated silicon are used as an active channel layer for the thin film transistors (TFTs) for long time. But these materials are fabricated at high temperatures. In this paper, we describe Nanocluster carbon thin films as alternative materials for the TFT device application. We present numerical simulations of the TFT, using the Semiconductor device simulator ATLAS from silvaco. We study the ON/OFF ratio of the Nanocluster carbon thin film based TFT.

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Gaurav N, Bhatnagar S, Raj R, De S, Niranjana S, Satyanarayana BS. Nanocluster carbon thin film as a semiconducting layer and feasibility for device application. In Proceedings of the 2008 International Conference on Computing, Communication and Networking, ICCCN 2008. 2008. 4787738 https://doi.org/10.1109/ICCCNET.2008.4787738