Nanocluster carbon thin film as a semiconducting layer and feasibility for device application

Nilabh Gaurav; Saransh Bhatnagar; Ravi Raj; Shounak De; S. Niranjana; B. S. Satyanarayana

doi:10.1109/ICCCNET.2008.4787738

Nanocluster carbon thin film as a semiconducting layer and feasibility for device application

Nilabh Gaurav, Saransh Bhatnagar, Ravi Raj, Shounak De, S. Niranjana, B. S. Satyanarayana

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Nanocluster Carbon thin films have been seen as an alternative semiconducting layer to a-Si: H. Amorphous and polycrystalline hydrogenated silicon are used as an active channel layer for the thin film transistors (TFTs) for long time. But these materials are fabricated at high temperatures. In this paper, we describe Nanocluster carbon thin films as alternative materials for the TFT device application. We present numerical simulations of the TFT, using the Semiconductor device simulator ATLAS from silvaco. We study the ON/OFF ratio of the Nanocluster carbon thin film based TFT.

Original language	English
Title of host publication	Proceedings of the 2008 International Conference on Computing, Communication and Networking, ICCCN 2008
DOIs	https://doi.org/10.1109/ICCCNET.2008.4787738
Publication status	Published - 2008
Event	2008 International Conference on Computing, Communication and Networking, ICCCN 2008 - Karur, Tamil Nadu, India Duration: 18-12-2008 → 20-12-2008

Conference

Conference	2008 International Conference on Computing, Communication and Networking, ICCCN 2008
Country/Territory	India
City	Karur, Tamil Nadu
Period	18-12-08 → 20-12-08

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Computer Science Applications
Electrical and Electronic Engineering

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10.1109/ICCCNET.2008.4787738

Cite this

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title = "Nanocluster carbon thin film as a semiconducting layer and feasibility for device application",

abstract = "Nanocluster Carbon thin films have been seen as an alternative semiconducting layer to a-Si: H. Amorphous and polycrystalline hydrogenated silicon are used as an active channel layer for the thin film transistors (TFTs) for long time. But these materials are fabricated at high temperatures. In this paper, we describe Nanocluster carbon thin films as alternative materials for the TFT device application. We present numerical simulations of the TFT, using the Semiconductor device simulator ATLAS from silvaco. We study the ON/OFF ratio of the Nanocluster carbon thin film based TFT.",

author = "Nilabh Gaurav and Saransh Bhatnagar and Ravi Raj and Shounak De and S. Niranjana and Satyanarayana, {B. S.}",

year = "2008",

doi = "10.1109/ICCCNET.2008.4787738",

language = "English",

isbn = "9781424435951",

booktitle = "Proceedings of the 2008 International Conference on Computing, Communication and Networking, ICCCN 2008",

note = "2008 International Conference on Computing, Communication and Networking, ICCCN 2008 ; Conference date: 18-12-2008 Through 20-12-2008",

}

Gaurav, N, Bhatnagar, S, Raj, R, De, S , Niranjana, S & Satyanarayana, BS 2008, Nanocluster carbon thin film as a semiconducting layer and feasibility for device application. in Proceedings of the 2008 International Conference on Computing, Communication and Networking, ICCCN 2008., 4787738, 2008 International Conference on Computing, Communication and Networking, ICCCN 2008, Karur, Tamil Nadu, India, 18-12-08. https://doi.org/10.1109/ICCCNET.2008.4787738

TY - GEN

T1 - Nanocluster carbon thin film as a semiconducting layer and feasibility for device application

AU - Gaurav, Nilabh

AU - Bhatnagar, Saransh

AU - Raj, Ravi

AU - De, Shounak

AU - Niranjana, S.

AU - Satyanarayana, B. S.

PY - 2008

Y1 - 2008

N2 - Nanocluster Carbon thin films have been seen as an alternative semiconducting layer to a-Si: H. Amorphous and polycrystalline hydrogenated silicon are used as an active channel layer for the thin film transistors (TFTs) for long time. But these materials are fabricated at high temperatures. In this paper, we describe Nanocluster carbon thin films as alternative materials for the TFT device application. We present numerical simulations of the TFT, using the Semiconductor device simulator ATLAS from silvaco. We study the ON/OFF ratio of the Nanocluster carbon thin film based TFT.

AB - Nanocluster Carbon thin films have been seen as an alternative semiconducting layer to a-Si: H. Amorphous and polycrystalline hydrogenated silicon are used as an active channel layer for the thin film transistors (TFTs) for long time. But these materials are fabricated at high temperatures. In this paper, we describe Nanocluster carbon thin films as alternative materials for the TFT device application. We present numerical simulations of the TFT, using the Semiconductor device simulator ATLAS from silvaco. We study the ON/OFF ratio of the Nanocluster carbon thin film based TFT.

UR - http://www.scopus.com/inward/record.url?scp=63649149190&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63649149190&partnerID=8YFLogxK

U2 - 10.1109/ICCCNET.2008.4787738

DO - 10.1109/ICCCNET.2008.4787738

M3 - Conference contribution

AN - SCOPUS:63649149190

SN - 9781424435951

BT - Proceedings of the 2008 International Conference on Computing, Communication and Networking, ICCCN 2008

T2 - 2008 International Conference on Computing, Communication and Networking, ICCCN 2008

Y2 - 18 December 2008 through 20 December 2008

ER -

Nanocluster carbon thin film as a semiconducting layer and feasibility for device application

Abstract

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