Off-centered polarization and ferroelectric phase transition in Li-doped ZnO thin films grown by pulsed-laser ablation

Dhananjay, J. Nagaraju, S. B. Krupanidhi

Research output: Contribution to journalArticle

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Abstract

Li-doped ZnO (Zn1-x Lix O, x=0.15) thin films have been grown on platinum-coated silicon substrates via pulsed-laser ablation. The films were grown at fixed substrate temperature of 500 °C and different partial pressure of oxygen (PO2 ∼100-300 mTorr). The films showed (002) preferred orientation. The doping concentration and built-in potential were estimated from the capacitance-voltage characteristics. In order to investigate the phase transition behavior of the films, dc conductivity and dielectric measurements were conducted. The phase transition temperature was found to be 330 K. The activation energy (dc) has been found to be 0.05 and 0.28 eV in ferroelectric and paraelectric phases, respectively. The Zn0.85 Li015 O thin films exhibited well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μC cm2 and coercive field of 25 kV/cm, at room temperature. The conduction mechanism of the laser ablated Zn0.85 Li015 O films was analyzed in the light of impedance spectroscopy.

Original languageEnglish
Article number104104
JournalJournal of Applied Physics
Volume101
Issue number10
DOIs
Publication statusPublished - 12-06-2007

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laser ablation
pulsed lasers
polarization
thin films
capacitance-voltage characteristics
partial pressure
platinum
transition temperature
hysteresis
impedance
activation energy
conduction
conductivity
silicon
room temperature
oxygen
spectroscopy
lasers
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "Li-doped ZnO (Zn1-x Lix O, x=0.15) thin films have been grown on platinum-coated silicon substrates via pulsed-laser ablation. The films were grown at fixed substrate temperature of 500 °C and different partial pressure of oxygen (PO2 ∼100-300 mTorr). The films showed (002) preferred orientation. The doping concentration and built-in potential were estimated from the capacitance-voltage characteristics. In order to investigate the phase transition behavior of the films, dc conductivity and dielectric measurements were conducted. The phase transition temperature was found to be 330 K. The activation energy (dc) has been found to be 0.05 and 0.28 eV in ferroelectric and paraelectric phases, respectively. The Zn0.85 Li015 O thin films exhibited well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μC cm2 and coercive field of 25 kV/cm, at room temperature. The conduction mechanism of the laser ablated Zn0.85 Li015 O films was analyzed in the light of impedance spectroscopy.",
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Off-centered polarization and ferroelectric phase transition in Li-doped ZnO thin films grown by pulsed-laser ablation. / Dhananjay; Nagaraju, J.; Krupanidhi, S. B.

In: Journal of Applied Physics, Vol. 101, No. 10, 104104, 12.06.2007.

Research output: Contribution to journalArticle

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AU - Dhananjay, null

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AU - Krupanidhi, S. B.

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N2 - Li-doped ZnO (Zn1-x Lix O, x=0.15) thin films have been grown on platinum-coated silicon substrates via pulsed-laser ablation. The films were grown at fixed substrate temperature of 500 °C and different partial pressure of oxygen (PO2 ∼100-300 mTorr). The films showed (002) preferred orientation. The doping concentration and built-in potential were estimated from the capacitance-voltage characteristics. In order to investigate the phase transition behavior of the films, dc conductivity and dielectric measurements were conducted. The phase transition temperature was found to be 330 K. The activation energy (dc) has been found to be 0.05 and 0.28 eV in ferroelectric and paraelectric phases, respectively. The Zn0.85 Li015 O thin films exhibited well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μC cm2 and coercive field of 25 kV/cm, at room temperature. The conduction mechanism of the laser ablated Zn0.85 Li015 O films was analyzed in the light of impedance spectroscopy.

AB - Li-doped ZnO (Zn1-x Lix O, x=0.15) thin films have been grown on platinum-coated silicon substrates via pulsed-laser ablation. The films were grown at fixed substrate temperature of 500 °C and different partial pressure of oxygen (PO2 ∼100-300 mTorr). The films showed (002) preferred orientation. The doping concentration and built-in potential were estimated from the capacitance-voltage characteristics. In order to investigate the phase transition behavior of the films, dc conductivity and dielectric measurements were conducted. The phase transition temperature was found to be 330 K. The activation energy (dc) has been found to be 0.05 and 0.28 eV in ferroelectric and paraelectric phases, respectively. The Zn0.85 Li015 O thin films exhibited well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μC cm2 and coercive field of 25 kV/cm, at room temperature. The conduction mechanism of the laser ablated Zn0.85 Li015 O films was analyzed in the light of impedance spectroscopy.

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