Oxygen plasma effects on indium oxide-based thin film transistors

Chao Feng Sung, Dhananjay, Chih Wei Chu, Yuh Zheng Lee

Research output: Contribution to conferencePaper

Abstract

We have fabricated indium oxide (In2O3) thin film transistors (TFTs) fabricated by using reactive evaporation process. The performance of In2O3 TFTs was improved after plasma oxidation treatment. The In2O3 TFTs exhibits a mobility of 2.92 cm2 V-1 s-1 and an Ion/I off ratio of 106.

Original languageEnglish
Publication statusPublished - 01-12-2009
Event2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, Taiwan, Province of China
Duration: 27-04-200930-04-2009

Conference

Conference2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009
CountryTaiwan, Province of China
CityTaipei
Period27-04-0930-04-09

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All Science Journal Classification (ASJC) codes

  • Computer Graphics and Computer-Aided Design
  • Computer Science Applications
  • Human-Computer Interaction

Cite this

Sung, C. F., Dhananjay, Chu, C. W., & Lee, Y. Z. (2009). Oxygen plasma effects on indium oxide-based thin film transistors. Paper presented at 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009, Taipei, Taiwan, Province of China.