Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys

Tangudu Bharat Kumar, Bahniman Ghosh, Bhaskar Awadhiya, Ankit Kumar Verma

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have investigated the performance of a spin transfer torque random access memory (STT-RAM) cell with a cross shaped Heusler compound based free layer using micromagnetic simulations. We have designed a free layer using a Cobalt based Heusler compound. Simulation results clearly show that the switching time from one state to the other state has been reduced, also it has been found that the critical switching current density (to switch the magnetization of the free layer of the STT RAM cell) is reduced.

Original languageEnglish
Article number014003
JournalJournal of Semiconductors
Volume37
Issue number1
DOIs
Publication statusPublished - 01-01-2016
Externally publishedYes

Fingerprint

random access memory
torque
Torque
Data storage equipment
Random access storage
Cobalt
Magnetization
Current density
Switches
cells
cobalt
simulation
current density
magnetization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kumar, Tangudu Bharat ; Ghosh, Bahniman ; Awadhiya, Bhaskar ; Verma, Ankit Kumar. / Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys. In: Journal of Semiconductors. 2016 ; Vol. 37, No. 1.
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Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys. / Kumar, Tangudu Bharat; Ghosh, Bahniman; Awadhiya, Bhaskar; Verma, Ankit Kumar.

In: Journal of Semiconductors, Vol. 37, No. 1, 014003, 01.01.2016.

Research output: Contribution to journalArticle

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