Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys

Tangudu Bharat Kumar, Bahniman Ghosh, Bhaskar Awadhiya, Ankit Kumar Verma

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We have investigated the performance of a spin transfer torque random access memory (STT-RAM) cell with a cross shaped Heusler compound based free layer using micromagnetic simulations. We have designed a free layer using a Cobalt based Heusler compound. Simulation results clearly show that the switching time from one state to the other state has been reduced, also it has been found that the critical switching current density (to switch the magnetization of the free layer of the STT RAM cell) is reduced.

Original languageEnglish
Article number014003
JournalJournal of Semiconductors
Issue number1
Publication statusPublished - 01-01-2016
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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