Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys

Tangudu Bharat Kumar; Bahniman Ghosh; Bhaskar Awadhiya; Ankit Kumar Verma

doi:10.1088/1674-4926/37/1/014003

Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys

Tangudu Bharat Kumar, Bahniman Ghosh, Bhaskar Awadhiya, Ankit Kumar Verma

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have investigated the performance of a spin transfer torque random access memory (STT-RAM) cell with a cross shaped Heusler compound based free layer using micromagnetic simulations. We have designed a free layer using a Cobalt based Heusler compound. Simulation results clearly show that the switching time from one state to the other state has been reduced, also it has been found that the critical switching current density (to switch the magnetization of the free layer of the STT RAM cell) is reduced.

Original language	English
Article number	014003
Journal	Journal of Semiconductors
Volume	37
Issue number	1
DOIs	https://doi.org/10.1088/1674-4926/37/1/014003
Publication status	Published - 01-01-2016
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/1674-4926/37/1/014003

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abstract = "We have investigated the performance of a spin transfer torque random access memory (STT-RAM) cell with a cross shaped Heusler compound based free layer using micromagnetic simulations. We have designed a free layer using a Cobalt based Heusler compound. Simulation results clearly show that the switching time from one state to the other state has been reduced, also it has been found that the critical switching current density (to switch the magnetization of the free layer of the STT RAM cell) is reduced.",

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AB - We have investigated the performance of a spin transfer torque random access memory (STT-RAM) cell with a cross shaped Heusler compound based free layer using micromagnetic simulations. We have designed a free layer using a Cobalt based Heusler compound. Simulation results clearly show that the switching time from one state to the other state has been reduced, also it has been found that the critical switching current density (to switch the magnetization of the free layer of the STT RAM cell) is reduced.

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Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys

Abstract

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