Photoacoustic investigation of intrinsic and extrinsic Si

Sajan D. George, B. Aneesh Kumar, P. Radhakrishnan, V. P.N. Nampoori, C. P.G. Vallabhan

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An open-cell configuration of the photoacoustic (PA) technique is employed to determine the thermal and transport properties of intrinsic Si and Si doped with B (p-type) and P (n-type). The experimentally obtained phase of the PA signal under heat transmission configuration is fitted to that of theoretical model by taking thermal and transport properties, namely, thermal diffusivity, diffusion coefficient, and surface recombination velocity, as adjustable parameters. It is seen from the analysis that doping and also the nature of dopant have a strong influence on the thermal and transport properties of semiconductors. The results are interpreted in terms of the carrier-assisted and phononassisted heat transfer mechanisms in semiconductors as well as the various scattering processes occurring in the propagation of heat carriers.

Original languageEnglish
Pages (from-to)3114-3118
Number of pages5
JournalOptical Engineering
Volume43
Issue number12
DOIs
Publication statusPublished - 01-12-2004

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Engineering(all)

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    George, S. D., Kumar, B. A., Radhakrishnan, P., Nampoori, V. P. N., & Vallabhan, C. P. G. (2004). Photoacoustic investigation of intrinsic and extrinsic Si. Optical Engineering, 43(12), 3114-3118. https://doi.org/10.1117/1.1814357