Photoacoustic measurement of transport properties in doped GaAs epitaxial layers

Sajan D. George, S. P. Radhakrishnan, C. P G Vallabhan, V. P N Nampoori

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The photoacoustic technique under heat transmission configuration is used to determine the effect of doping on both the thermal and transport properties of p- and n-type GaAs epitaxial layers grown on GaAs substrate by the molecular beam epitaxial method. Analysis of the data is made on the basis of the theoretical model of Rosencwaig and Gersho. Thermal and transport properties of the epitaxial layers are found by fitting the phase of the experimentally obtained photoacoustic signal with that of the theoretical model. It is observed that both the thermal and transport properties, i.e. thermal diffusivity, diffusion coefficient, surface recombination velocity and nonradiative recombination time, depend on the type of doping in the epitaxial layer. The results clearly show that the photoacoustic technique using heat transmission configuration is an excellent tool to study the thermal and transport properties of epitaxial layers under different doping conditions.

Original languageEnglish
Pages (from-to)416-421
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Volume195
Issue number2
DOIs
Publication statusPublished - 01-01-2003

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Photoacoustic effect
Epitaxial layers
Transport properties
Thermodynamic properties
thermodynamic properties
transport properties
Doping (additives)
heat transmission
Molecular beams
Thermal diffusivity
thermal diffusivity
configurations
molecular beams
diffusion coefficient
gallium arsenide
Substrates
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

George, Sajan D. ; Radhakrishnan, S. P. ; Vallabhan, C. P G ; Nampoori, V. P N. / Photoacoustic measurement of transport properties in doped GaAs epitaxial layers. In: Physica Status Solidi (A) Applied Research. 2003 ; Vol. 195, No. 2. pp. 416-421.
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Photoacoustic measurement of transport properties in doped GaAs epitaxial layers. / George, Sajan D.; Radhakrishnan, S. P.; Vallabhan, C. P G; Nampoori, V. P N.

In: Physica Status Solidi (A) Applied Research, Vol. 195, No. 2, 01.01.2003, p. 416-421.

Research output: Contribution to journalArticle

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