Photoacoustic study of the effect of doping concentration on the transport properties of GaAs epitaxial layers

Sajan D. George, S. Dilna, R. Prasanth, P. Radhakrishnan, C. P G Vallabhan, V. P N Nampoori

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report a photoacoustic (PA) study of the thermal and transport properties of a GaAs epitaxial layer doped with Si at varying doping concentration, grown on GaAs substrate by molecular beam epitaxy. The data are analyzed on the basis of Rosencwaig and Gersho's theory of the PA effect. The amplitude of the PA signal gives information about various heat generation mechanisms in semiconductors. The experimental data obtained from the measurement of the PA signal as a function of modulation frequency in a heat transmission configuration were fitted with the phase of PA signal obtained from the theoretical model evaluated by considering four parameters - viz., thermal diffusivity, diffusion coefficient, nonradiative recombination time, and surface recombination velocity - as adjustable parameters. It is seen from the analysis that the photoacoustic technique is sensitive to the changes in the surface states depend on the doping concentration. The study demonstrates the effectiveness of the photoacoustic technique as a noninvasive and nondestructive method to measure and evaluate the thermal and transport properties of epitaxial layers.

Original languageEnglish
Pages (from-to)1476-1480
Number of pages5
JournalOptical Engineering
Volume42
Issue number5
DOIs
Publication statusPublished - 01-05-2003

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Photoacoustic effect
Epitaxial layers
Transport properties
transport properties
Doping (additives)
thermodynamic properties
heat generation
thermal diffusivity
heat transmission
frequency modulation
molecular beam epitaxy
diffusion coefficient
Thermodynamic properties
configurations
Thermal diffusivity
Heat generation
Surface states
Frequency modulation
Molecular beam epitaxy
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

George, S. D., Dilna, S., Prasanth, R., Radhakrishnan, P., Vallabhan, C. P. G., & Nampoori, V. P. N. (2003). Photoacoustic study of the effect of doping concentration on the transport properties of GaAs epitaxial layers. Optical Engineering, 42(5), 1476-1480. https://doi.org/10.1117/1.1564101
George, Sajan D. ; Dilna, S. ; Prasanth, R. ; Radhakrishnan, P. ; Vallabhan, C. P G ; Nampoori, V. P N. / Photoacoustic study of the effect of doping concentration on the transport properties of GaAs epitaxial layers. In: Optical Engineering. 2003 ; Vol. 42, No. 5. pp. 1476-1480.
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George, SD, Dilna, S, Prasanth, R, Radhakrishnan, P, Vallabhan, CPG & Nampoori, VPN 2003, 'Photoacoustic study of the effect of doping concentration on the transport properties of GaAs epitaxial layers', Optical Engineering, vol. 42, no. 5, pp. 1476-1480. https://doi.org/10.1117/1.1564101

Photoacoustic study of the effect of doping concentration on the transport properties of GaAs epitaxial layers. / George, Sajan D.; Dilna, S.; Prasanth, R.; Radhakrishnan, P.; Vallabhan, C. P G; Nampoori, V. P N.

In: Optical Engineering, Vol. 42, No. 5, 01.05.2003, p. 1476-1480.

Research output: Contribution to journalArticle

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