Photoconductivity and photo-detecting properties of vacuum deposited ZnSe thin films

K. Gowrish Rao, Kasturi V. Bangera, G. K. Shivakumar

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The paper reports the detailed analysis of photoconductivity and photo-detecting properties of vacuum deposited zinc selenide (ZnSe) thin films. The vacuum deposited ZnSe films were found to have high absorption coefficient and showed peak photo-response at 460 nm. The photocurrent and photo-response time of the films were measured as a function of substrate temperature and annealing conditions. Considerable increase in photocurrent and much faster photo-response was observed in films deposited at high substrate temperatures. Annealing at moderate temperatures also improved the photoconductivity and response time of the films.

Original languageEnglish
Pages (from-to)1921-1925
Number of pages5
JournalSolid State Sciences
Volume13
Issue number11
DOIs
Publication statusPublished - 01-11-2011

Fingerprint

zinc selenides
Photoconductivity
photoconductivity
Zinc
Vacuum
Thin films
vacuum
thin films
Photocurrents
photocurrents
Annealing
annealing
Substrates
Temperature
temperature
absorptivity
zinc selenide

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Gowrish Rao, K. ; Bangera, Kasturi V. ; Shivakumar, G. K. / Photoconductivity and photo-detecting properties of vacuum deposited ZnSe thin films. In: Solid State Sciences. 2011 ; Vol. 13, No. 11. pp. 1921-1925.
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Photoconductivity and photo-detecting properties of vacuum deposited ZnSe thin films. / Gowrish Rao, K.; Bangera, Kasturi V.; Shivakumar, G. K.

In: Solid State Sciences, Vol. 13, No. 11, 01.11.2011, p. 1921-1925.

Research output: Contribution to journalArticle

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