Photoluminescence and Raman spectroscopic analysis of PV deposited ZnS thin films

Rashmitha Keshav, Mahesha MG

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Structural, optical and emission characteristics of the physical vapor deposited (PVD) ZnS films were investigated. Refined patterns of x-ray diffractogram (XRD) revealed that the grown films have zinc blende (ZB) structure with preferential orientation along (111) plane. Optical spectrograph was analyzed to derive various optical parameters, including optical band gap, which assess the device suitability of grown films. Raman spectra, fitted with Lorentzian peak, provided insight on frequency shift as an effect of elastic and thermal strains. Intensified peaks in photoluminescence spectra reflected observable recombination process due to larger band gap and assisted in study of defect-states in the grown films. In brief, the paper reports on influence of thickness and post deposition annealing on film characteristics analyzed through spectroscopic techniques.

Original languageEnglish
Pages (from-to)360-367
Number of pages8
JournalMaterials Research Bulletin
Volume105
DOIs
Publication statusPublished - 01-09-2018

Fingerprint

Spectroscopic analysis
spectroscopic analysis
Photoluminescence
photoluminescence
Thin films
thin films
Spectrographs
Optical band gaps
frequency shift
spectrographs
Raman scattering
Zinc
Energy gap
zinc
Vapors
Annealing
vapors
Raman spectra
X rays
Defects

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

@article{833adc87028a4f0ebdf14fcafc9cd5ca,
title = "Photoluminescence and Raman spectroscopic analysis of PV deposited ZnS thin films",
abstract = "Structural, optical and emission characteristics of the physical vapor deposited (PVD) ZnS films were investigated. Refined patterns of x-ray diffractogram (XRD) revealed that the grown films have zinc blende (ZB) structure with preferential orientation along (111) plane. Optical spectrograph was analyzed to derive various optical parameters, including optical band gap, which assess the device suitability of grown films. Raman spectra, fitted with Lorentzian peak, provided insight on frequency shift as an effect of elastic and thermal strains. Intensified peaks in photoluminescence spectra reflected observable recombination process due to larger band gap and assisted in study of defect-states in the grown films. In brief, the paper reports on influence of thickness and post deposition annealing on film characteristics analyzed through spectroscopic techniques.",
author = "Rashmitha Keshav and Mahesha MG",
year = "2018",
month = "9",
day = "1",
doi = "10.1016/j.materresbull.2018.05.018",
language = "English",
volume = "105",
pages = "360--367",
journal = "Materials Research Bulletin",
issn = "0025-5408",
publisher = "Elsevier Limited",

}

Photoluminescence and Raman spectroscopic analysis of PV deposited ZnS thin films. / Keshav, Rashmitha; MG, Mahesha.

In: Materials Research Bulletin, Vol. 105, 01.09.2018, p. 360-367.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photoluminescence and Raman spectroscopic analysis of PV deposited ZnS thin films

AU - Keshav, Rashmitha

AU - MG, Mahesha

PY - 2018/9/1

Y1 - 2018/9/1

N2 - Structural, optical and emission characteristics of the physical vapor deposited (PVD) ZnS films were investigated. Refined patterns of x-ray diffractogram (XRD) revealed that the grown films have zinc blende (ZB) structure with preferential orientation along (111) plane. Optical spectrograph was analyzed to derive various optical parameters, including optical band gap, which assess the device suitability of grown films. Raman spectra, fitted with Lorentzian peak, provided insight on frequency shift as an effect of elastic and thermal strains. Intensified peaks in photoluminescence spectra reflected observable recombination process due to larger band gap and assisted in study of defect-states in the grown films. In brief, the paper reports on influence of thickness and post deposition annealing on film characteristics analyzed through spectroscopic techniques.

AB - Structural, optical and emission characteristics of the physical vapor deposited (PVD) ZnS films were investigated. Refined patterns of x-ray diffractogram (XRD) revealed that the grown films have zinc blende (ZB) structure with preferential orientation along (111) plane. Optical spectrograph was analyzed to derive various optical parameters, including optical band gap, which assess the device suitability of grown films. Raman spectra, fitted with Lorentzian peak, provided insight on frequency shift as an effect of elastic and thermal strains. Intensified peaks in photoluminescence spectra reflected observable recombination process due to larger band gap and assisted in study of defect-states in the grown films. In brief, the paper reports on influence of thickness and post deposition annealing on film characteristics analyzed through spectroscopic techniques.

UR - http://www.scopus.com/inward/record.url?scp=85048732711&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048732711&partnerID=8YFLogxK

U2 - 10.1016/j.materresbull.2018.05.018

DO - 10.1016/j.materresbull.2018.05.018

M3 - Article

VL - 105

SP - 360

EP - 367

JO - Materials Research Bulletin

JF - Materials Research Bulletin

SN - 0025-5408

ER -