Photothermal deflection measurement on heat transport in GaAs epitaxial layers

Sajan D. George, P. Radhakrishnan, V. P.N. Nampoori, C. P.G. Vallabhan

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons.

Original languageEnglish
Article number165319
Pages (from-to)1653191-1653196
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume68
Issue number16
Publication statusPublished - 01-10-2003

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Thermal diffusivity
Epitaxial layers
thermal diffusivity
deflection
heat
Doping (additives)
Molecular beams
Phonons
molecular beams
Hot Temperature
gallium arsenide
phonons
heat transfer
Pumps
Scattering
pumps
slopes
Heat transfer
propagation
Lasers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

George, S. D., Radhakrishnan, P., Nampoori, V. P. N., & Vallabhan, C. P. G. (2003). Photothermal deflection measurement on heat transport in GaAs epitaxial layers. Physical Review B - Condensed Matter and Materials Physics, 68(16), 1653191-1653196. [165319].
George, Sajan D. ; Radhakrishnan, P. ; Nampoori, V. P.N. ; Vallabhan, C. P.G. / Photothermal deflection measurement on heat transport in GaAs epitaxial layers. In: Physical Review B - Condensed Matter and Materials Physics. 2003 ; Vol. 68, No. 16. pp. 1653191-1653196.
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George, SD, Radhakrishnan, P, Nampoori, VPN & Vallabhan, CPG 2003, 'Photothermal deflection measurement on heat transport in GaAs epitaxial layers', Physical Review B - Condensed Matter and Materials Physics, vol. 68, no. 16, 165319, pp. 1653191-1653196.

Photothermal deflection measurement on heat transport in GaAs epitaxial layers. / George, Sajan D.; Radhakrishnan, P.; Nampoori, V. P.N.; Vallabhan, C. P.G.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 68, No. 16, 165319, 01.10.2003, p. 1653191-1653196.

Research output: Contribution to journalArticle

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