Photothermal deflection studies on heat transport in intrinsic and extrinsic InP

S. D. George, P. Radhakrishnan, V. P N Nampoori, C. P G Vallabhan

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Laser induced transverse photothermal deflection technique has been employed to determine the thermal parameters of InP doped with Sn, S and Fe as well as intrinsic InP. The thermal diffusivity values of these various samples are evaluated from the slope of the curve plotted between the phase of photothermal deflection signal and pump-probe offset. Analysis of the data shows that heat transport and hence the thermal diffusivity value, is greatly affected by the introduction of dopant. It is also seen that the direction of heat flow with respect to the plane of cleavage of semiconductor wafers influences the thermal diffusivity value. The results are explained in terms of dominating phonon assisted heat transfer mechanism in semiconductors.

Original languageEnglish
Pages (from-to)633-637
Number of pages5
JournalApplied Physics B: Lasers and Optics
Volume77
Issue number6-7
DOIs
Publication statusPublished - 01-11-2003

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thermal diffusivity
deflection
heat
heat transmission
cleavage
heat transfer
wafers
pumps
slopes
probes
curves
lasers

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics

Cite this

George, S. D. ; Radhakrishnan, P. ; Nampoori, V. P N ; Vallabhan, C. P G. / Photothermal deflection studies on heat transport in intrinsic and extrinsic InP. In: Applied Physics B: Lasers and Optics. 2003 ; Vol. 77, No. 6-7. pp. 633-637.
@article{32170fed8b884c16ac99ef692777e33b,
title = "Photothermal deflection studies on heat transport in intrinsic and extrinsic InP",
abstract = "Laser induced transverse photothermal deflection technique has been employed to determine the thermal parameters of InP doped with Sn, S and Fe as well as intrinsic InP. The thermal diffusivity values of these various samples are evaluated from the slope of the curve plotted between the phase of photothermal deflection signal and pump-probe offset. Analysis of the data shows that heat transport and hence the thermal diffusivity value, is greatly affected by the introduction of dopant. It is also seen that the direction of heat flow with respect to the plane of cleavage of semiconductor wafers influences the thermal diffusivity value. The results are explained in terms of dominating phonon assisted heat transfer mechanism in semiconductors.",
author = "George, {S. D.} and P. Radhakrishnan and Nampoori, {V. P N} and Vallabhan, {C. P G}",
year = "2003",
month = "11",
day = "1",
doi = "10.1007/s00340-003-1272-x",
language = "English",
volume = "77",
pages = "633--637",
journal = "Applied Physics B: Lasers and Optics",
issn = "0946-2171",
publisher = "Springer Verlag",
number = "6-7",

}

Photothermal deflection studies on heat transport in intrinsic and extrinsic InP. / George, S. D.; Radhakrishnan, P.; Nampoori, V. P N; Vallabhan, C. P G.

In: Applied Physics B: Lasers and Optics, Vol. 77, No. 6-7, 01.11.2003, p. 633-637.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photothermal deflection studies on heat transport in intrinsic and extrinsic InP

AU - George, S. D.

AU - Radhakrishnan, P.

AU - Nampoori, V. P N

AU - Vallabhan, C. P G

PY - 2003/11/1

Y1 - 2003/11/1

N2 - Laser induced transverse photothermal deflection technique has been employed to determine the thermal parameters of InP doped with Sn, S and Fe as well as intrinsic InP. The thermal diffusivity values of these various samples are evaluated from the slope of the curve plotted between the phase of photothermal deflection signal and pump-probe offset. Analysis of the data shows that heat transport and hence the thermal diffusivity value, is greatly affected by the introduction of dopant. It is also seen that the direction of heat flow with respect to the plane of cleavage of semiconductor wafers influences the thermal diffusivity value. The results are explained in terms of dominating phonon assisted heat transfer mechanism in semiconductors.

AB - Laser induced transverse photothermal deflection technique has been employed to determine the thermal parameters of InP doped with Sn, S and Fe as well as intrinsic InP. The thermal diffusivity values of these various samples are evaluated from the slope of the curve plotted between the phase of photothermal deflection signal and pump-probe offset. Analysis of the data shows that heat transport and hence the thermal diffusivity value, is greatly affected by the introduction of dopant. It is also seen that the direction of heat flow with respect to the plane of cleavage of semiconductor wafers influences the thermal diffusivity value. The results are explained in terms of dominating phonon assisted heat transfer mechanism in semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=0345171693&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0345171693&partnerID=8YFLogxK

U2 - 10.1007/s00340-003-1272-x

DO - 10.1007/s00340-003-1272-x

M3 - Article

VL - 77

SP - 633

EP - 637

JO - Applied Physics B: Lasers and Optics

JF - Applied Physics B: Lasers and Optics

SN - 0946-2171

IS - 6-7

ER -