Plasma diagnostic studies of S bend filtered cathodic vacuum arc system for the deposition of tetrahedral amorphous carbon films

O. S. Panwar, Mohd Alim Khan, P. N. Dixit, B. S. Satyanarayana, R. Bhattacharyya, Sushil Kumar, C. M.S. Rauthan

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The plasma parameters obtained using Langmuir probe of the vacuum arc generated in the outer region of an S bend filtered cathodic vacuum arc system developed for the deposition of tetrahedral amorphous carbon (ta-C) film and also hydrogen and nitrogen incorporated ta-C films have been reported. The effects of varying arc current and the magnetic field have been studied on the plasma parameters of the vacuum arc used in depositing ta-C, ta-C:H and ta-C:N films at different hydrogen and nitrogen partial pressures. The values of ion-saturation current (Iis), electron temperature (Te) and electron density (ne) are found to be in the range 1.50×10-7-2.63×10-6 A, 1.90-2.29 eV and 3.6×109-7.4×10-6 cm-3, respectively, of the vacuum arc generated for the deposition of as grown ta-C films. Hydrogen and nitrogen incorporation of the precursors are found to reduce the values of Iis, Te and ne of the arc generated. The presence of magnetic field is found to increase the values of Iis and ne and reduce those of Te in depositing as grown ta-C films whereas hydrogen and nitrogen incorporation of the precursors decrease the values of Iis and ne and enhances those of Te. The properties of ta-C film so grown are also briefly summarized and found to have some novel features.

Original languageEnglish
Pages (from-to)255-260
Number of pages6
JournalIndian Journal of Pure and Applied Physics
Volume46
Issue number4
Publication statusPublished - 01-04-2008
Externally publishedYes

Fingerprint

plasma diagnostics
arcs
vacuum
carbon
nitrogen
hydrogen
electrostatic probes
magnetic fields
partial pressure
temperature
electron energy
saturation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Panwar, O. S., Khan, M. A., Dixit, P. N., Satyanarayana, B. S., Bhattacharyya, R., Kumar, S., & Rauthan, C. M. S. (2008). Plasma diagnostic studies of S bend filtered cathodic vacuum arc system for the deposition of tetrahedral amorphous carbon films. Indian Journal of Pure and Applied Physics, 46(4), 255-260.
Panwar, O. S. ; Khan, Mohd Alim ; Dixit, P. N. ; Satyanarayana, B. S. ; Bhattacharyya, R. ; Kumar, Sushil ; Rauthan, C. M.S. / Plasma diagnostic studies of S bend filtered cathodic vacuum arc system for the deposition of tetrahedral amorphous carbon films. In: Indian Journal of Pure and Applied Physics. 2008 ; Vol. 46, No. 4. pp. 255-260.
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Panwar, OS, Khan, MA, Dixit, PN, Satyanarayana, BS, Bhattacharyya, R, Kumar, S & Rauthan, CMS 2008, 'Plasma diagnostic studies of S bend filtered cathodic vacuum arc system for the deposition of tetrahedral amorphous carbon films', Indian Journal of Pure and Applied Physics, vol. 46, no. 4, pp. 255-260.

Plasma diagnostic studies of S bend filtered cathodic vacuum arc system for the deposition of tetrahedral amorphous carbon films. / Panwar, O. S.; Khan, Mohd Alim; Dixit, P. N.; Satyanarayana, B. S.; Bhattacharyya, R.; Kumar, Sushil; Rauthan, C. M.S.

In: Indian Journal of Pure and Applied Physics, Vol. 46, No. 4, 01.04.2008, p. 255-260.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Plasma diagnostic studies of S bend filtered cathodic vacuum arc system for the deposition of tetrahedral amorphous carbon films

AU - Panwar, O. S.

AU - Khan, Mohd Alim

AU - Dixit, P. N.

AU - Satyanarayana, B. S.

AU - Bhattacharyya, R.

AU - Kumar, Sushil

AU - Rauthan, C. M.S.

PY - 2008/4/1

Y1 - 2008/4/1

N2 - The plasma parameters obtained using Langmuir probe of the vacuum arc generated in the outer region of an S bend filtered cathodic vacuum arc system developed for the deposition of tetrahedral amorphous carbon (ta-C) film and also hydrogen and nitrogen incorporated ta-C films have been reported. The effects of varying arc current and the magnetic field have been studied on the plasma parameters of the vacuum arc used in depositing ta-C, ta-C:H and ta-C:N films at different hydrogen and nitrogen partial pressures. The values of ion-saturation current (Iis), electron temperature (Te) and electron density (ne) are found to be in the range 1.50×10-7-2.63×10-6 A, 1.90-2.29 eV and 3.6×109-7.4×10-6 cm-3, respectively, of the vacuum arc generated for the deposition of as grown ta-C films. Hydrogen and nitrogen incorporation of the precursors are found to reduce the values of Iis, Te and ne of the arc generated. The presence of magnetic field is found to increase the values of Iis and ne and reduce those of Te in depositing as grown ta-C films whereas hydrogen and nitrogen incorporation of the precursors decrease the values of Iis and ne and enhances those of Te. The properties of ta-C film so grown are also briefly summarized and found to have some novel features.

AB - The plasma parameters obtained using Langmuir probe of the vacuum arc generated in the outer region of an S bend filtered cathodic vacuum arc system developed for the deposition of tetrahedral amorphous carbon (ta-C) film and also hydrogen and nitrogen incorporated ta-C films have been reported. The effects of varying arc current and the magnetic field have been studied on the plasma parameters of the vacuum arc used in depositing ta-C, ta-C:H and ta-C:N films at different hydrogen and nitrogen partial pressures. The values of ion-saturation current (Iis), electron temperature (Te) and electron density (ne) are found to be in the range 1.50×10-7-2.63×10-6 A, 1.90-2.29 eV and 3.6×109-7.4×10-6 cm-3, respectively, of the vacuum arc generated for the deposition of as grown ta-C films. Hydrogen and nitrogen incorporation of the precursors are found to reduce the values of Iis, Te and ne of the arc generated. The presence of magnetic field is found to increase the values of Iis and ne and reduce those of Te in depositing as grown ta-C films whereas hydrogen and nitrogen incorporation of the precursors decrease the values of Iis and ne and enhances those of Te. The properties of ta-C film so grown are also briefly summarized and found to have some novel features.

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M3 - Article

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