Polymer assisted preparation and characterization of ZnO and Sn doped ZnO nanostructures

A. Santhosh Kumar, K. K. Nagaraja, H. S. Nagaraja

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Zinc oxide (ZnO) and tin doped ZnO are wide band gap semiconducting materials with excellent optoelectronic properties. In the present study ZnO and Sn: ZnO films are prepared using polymer assisted sol gel process. The thermal behaviour of the dried gel sample studied using DTA and TG analysis. TG-DTA result shown that most of the organic of PVA and CH3COO group of zinc acetate and other volatiles are removed below 500°C. The effect of Sn on the crystallinity, microstructral properties of the deposited films was investigated. XRD patterns of undoped and Sn doped ZnO films indicate enhanced intensities for the peak corresponding to (002) plane, resulting preferential orientation along the c-axis. The SEM images confirm that the grown films are composed of nanorods.

Original languageEnglish
Article number012077
JournalIOP Conference Series: Materials Science and Engineering
Volume73
Issue number1
DOIs
Publication statusPublished - 01-01-2015
EventInternational Conference on Materials Science and Technology, ICMST 2012 - Kerala, India
Duration: 10-06-201214-06-2012

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Zinc Oxide
Zinc oxide
Nanostructures
Polymers
Differential thermal analysis
Oxide films
Zinc Acetate
Tin
Nanorods
Optoelectronic devices
Sol-gel process
Energy gap
Zinc
Gels
Scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

Cite this

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Polymer assisted preparation and characterization of ZnO and Sn doped ZnO nanostructures. / Kumar, A. Santhosh; Nagaraja, K. K.; Nagaraja, H. S.

In: IOP Conference Series: Materials Science and Engineering, Vol. 73, No. 1, 012077, 01.01.2015.

Research output: Contribution to journalConference article

TY - JOUR

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N2 - Zinc oxide (ZnO) and tin doped ZnO are wide band gap semiconducting materials with excellent optoelectronic properties. In the present study ZnO and Sn: ZnO films are prepared using polymer assisted sol gel process. The thermal behaviour of the dried gel sample studied using DTA and TG analysis. TG-DTA result shown that most of the organic of PVA and CH3COO group of zinc acetate and other volatiles are removed below 500°C. The effect of Sn on the crystallinity, microstructral properties of the deposited films was investigated. XRD patterns of undoped and Sn doped ZnO films indicate enhanced intensities for the peak corresponding to (002) plane, resulting preferential orientation along the c-axis. The SEM images confirm that the grown films are composed of nanorods.

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