TY - JOUR
T1 - Potential thermoelectric materials of indium and tellurium co-doped bismuth selenide single crystals grown by melt growth technique
AU - Hegde, Ganesh Shridhar
AU - Prabhu, A. N.
AU - Gao, Y. H.
AU - Kuo, Y. K.
AU - Reddy, V. Raghavendra
N1 - Funding Information:
Ganesh Shridhar Hegde (GSH) would like to acknowledge the Manipal Academy of Higher Education for providing financial support from Dr. T. M. A. doctoral fellowship. The work was partially carried out using facilities of UGC-DAE,CSR, Indore. GSH would like to thank Dr. Mahesha M. G, Dr. Dhananjaya Kekuda, Dr. Shyam prasad. The electrical and thermal transport measurements were supported by the Ministry of Science and Technology of Taiwan under Grant Nos. MOST-109-2112-M-259-007-MY3 and MOST-108-2112-M-259-001 (YKK) . GSH would like to thank Dr. Arun Umarji for providing a vacuum sealing facility in Material Research Centre, IISC, Bengaluru.
Funding Information:
Ganesh Shridhar Hegde (GSH) would like to acknowledge the Manipal Academy of Higher Education for providing financial support from Dr. T. M. A. doctoral fellowship. The work was partially carried out using facilities of UGC-DAE,CSR, Indore. GSH would like to thank Dr. Mahesha M. G, Dr. Dhananjaya Kekuda, Dr. Shyam prasad. The electrical and thermal transport measurements were supported by the Ministry of Science and Technology of Taiwan under Grant Nos. MOST-109-2112-M-259-007-MY3 and MOST-108-2112-M-259-001 (YKK). GSH would like to thank Dr. Arun Umarji for providing a vacuum sealing facility in Material Research Centre, IISC, Bengaluru.
Publisher Copyright:
© 2021 Elsevier B.V.
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/6/15
Y1 - 2021/6/15
N2 - In the present work, the thermoelectric properties of potential thermoelectric materials (Bi1−xInx)2Se2.7Te0.3 grown as high-quality single crystals by the melt growth technique were investigated between 10 and 350 K. Powder X-ray diffraction confirms the hexagonal crystal structure of all studied crystals. The high-resolution X-ray diffraction study reveals the direction of growth, single-crystal quality, dislocation density, and the influence of dopants on the inner plane structure of the crystals. A clean surface with very low angle grain boundaries is observed by the field emission scanning electron microscopy. Energy-dispersive X-ray analysis confirms the elemental composition of the crystals. Electrical resistivity has shown degenerate semiconducting behavior with low activation energy. The Seebeck coefficient confirms p-type for the pristine and n-type conducting behavior for the doped samples, with the correlation to the carrier concentration and carrier mobility in the order of 1025/m3 and 10−4 m2/V s, respectively. Thermal conductivity has shown the dominant behavior of phonon scattering. A significant reduction in the electrical resistivity was found for the co-doped (Bi0.96In0.04)2Se2.7Te0.3 sample, leading to an enhancement of the power factor (PF) and thermoelectric figure of merit (ZT) by a factor of about 8.0 and 4.1, respectively, as compared to the pristine Bi2Se3 sample at 350 K. The highest ZT value of about 0.285 is achieved for (Bi0.96In0.04)2Se2.7Te0.3 at 350 K.
AB - In the present work, the thermoelectric properties of potential thermoelectric materials (Bi1−xInx)2Se2.7Te0.3 grown as high-quality single crystals by the melt growth technique were investigated between 10 and 350 K. Powder X-ray diffraction confirms the hexagonal crystal structure of all studied crystals. The high-resolution X-ray diffraction study reveals the direction of growth, single-crystal quality, dislocation density, and the influence of dopants on the inner plane structure of the crystals. A clean surface with very low angle grain boundaries is observed by the field emission scanning electron microscopy. Energy-dispersive X-ray analysis confirms the elemental composition of the crystals. Electrical resistivity has shown degenerate semiconducting behavior with low activation energy. The Seebeck coefficient confirms p-type for the pristine and n-type conducting behavior for the doped samples, with the correlation to the carrier concentration and carrier mobility in the order of 1025/m3 and 10−4 m2/V s, respectively. Thermal conductivity has shown the dominant behavior of phonon scattering. A significant reduction in the electrical resistivity was found for the co-doped (Bi0.96In0.04)2Se2.7Te0.3 sample, leading to an enhancement of the power factor (PF) and thermoelectric figure of merit (ZT) by a factor of about 8.0 and 4.1, respectively, as compared to the pristine Bi2Se3 sample at 350 K. The highest ZT value of about 0.285 is achieved for (Bi0.96In0.04)2Se2.7Te0.3 at 350 K.
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U2 - 10.1016/j.jallcom.2021.158814
DO - 10.1016/j.jallcom.2021.158814
M3 - Article
AN - SCOPUS:85100649881
SN - 0925-8388
VL - 866
JO - Journal of the Less-Common Metals
JF - Journal of the Less-Common Metals
M1 - 158814
ER -