Rapid annealing-transformed, intense-red-emitting Eu-doped ZnGa2O4 nanoparticles with high colour purity, for very-high-resolution display applications

Deepak Hebbar N, K. S. Choudhari, Nimai Pathak, S. A. Shivashankar, Suresh D. Kulkarni

Research output: Contribution to journalArticle

Abstract

Rapid annealing (RA), an eco-friendly, soft processing technique was employed to manipulate emission properties of nanocrystalline ZnGa1.99Eu0.01O4. With RA processing that lasts only minutes, nanocrystals with weak emission were transformed into intense red-emitting phosphor. Effect of RA process parameters: temperature, duration, and cycling, on emission properties has been thoroughly studied. Compared to furnace annealing that usually lasts hours, RA, which involves simple and inexpensive apparatus, is shown to be very efficient and beneficial, as the total process time is only 15 min. This swift processing leads to enhanced quantum yield and higher colour purity (84%), without grain growth. Even after RA at 900 °C, crystallites measure ˜7-8 nm, suggesting that they might serve as pixels for very-high-resolution applications. Two PL-lifetimes obtained, imply Eu3+ distribution (i) on the nanocrystal surface, (ii) within host-lattice (spinel gallate); the distribution changes gradually with RA. Judd-Ofelt analysis and spectroscopic analysis of the PL have been discussed in detail.

Original languageEnglish
Article number110544
JournalMaterials Research Bulletin
Volume119
DOIs
Publication statusPublished - 01-11-2019

Fingerprint

purity
Display devices
Annealing
Nanoparticles
Color
color
nanoparticles
annealing
high resolution
Nanocrystals
nanocrystals
Processing
gallates
Spectroscopic analysis
spectroscopic analysis
Quantum yield
Grain growth
Crystallites
Crystal lattices
Phosphors

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

@article{beae4d783a774396a5485528df3ae45d,
title = "Rapid annealing-transformed, intense-red-emitting Eu-doped ZnGa2O4 nanoparticles with high colour purity, for very-high-resolution display applications",
abstract = "Rapid annealing (RA), an eco-friendly, soft processing technique was employed to manipulate emission properties of nanocrystalline ZnGa1.99Eu0.01O4. With RA processing that lasts only minutes, nanocrystals with weak emission were transformed into intense red-emitting phosphor. Effect of RA process parameters: temperature, duration, and cycling, on emission properties has been thoroughly studied. Compared to furnace annealing that usually lasts hours, RA, which involves simple and inexpensive apparatus, is shown to be very efficient and beneficial, as the total process time is only 15 min. This swift processing leads to enhanced quantum yield and higher colour purity (84{\%}), without grain growth. Even after RA at 900 °C, crystallites measure ˜7-8 nm, suggesting that they might serve as pixels for very-high-resolution applications. Two PL-lifetimes obtained, imply Eu3+ distribution (i) on the nanocrystal surface, (ii) within host-lattice (spinel gallate); the distribution changes gradually with RA. Judd-Ofelt analysis and spectroscopic analysis of the PL have been discussed in detail.",
author = "{Hebbar N}, Deepak and Choudhari, {K. S.} and Nimai Pathak and Shivashankar, {S. A.} and Kulkarni, {Suresh D.}",
year = "2019",
month = "11",
day = "1",
doi = "10.1016/j.materresbull.2019.110544",
language = "English",
volume = "119",
journal = "Materials Research Bulletin",
issn = "0025-5408",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Rapid annealing-transformed, intense-red-emitting Eu-doped ZnGa2O4 nanoparticles with high colour purity, for very-high-resolution display applications

AU - Hebbar N, Deepak

AU - Choudhari, K. S.

AU - Pathak, Nimai

AU - Shivashankar, S. A.

AU - Kulkarni, Suresh D.

PY - 2019/11/1

Y1 - 2019/11/1

N2 - Rapid annealing (RA), an eco-friendly, soft processing technique was employed to manipulate emission properties of nanocrystalline ZnGa1.99Eu0.01O4. With RA processing that lasts only minutes, nanocrystals with weak emission were transformed into intense red-emitting phosphor. Effect of RA process parameters: temperature, duration, and cycling, on emission properties has been thoroughly studied. Compared to furnace annealing that usually lasts hours, RA, which involves simple and inexpensive apparatus, is shown to be very efficient and beneficial, as the total process time is only 15 min. This swift processing leads to enhanced quantum yield and higher colour purity (84%), without grain growth. Even after RA at 900 °C, crystallites measure ˜7-8 nm, suggesting that they might serve as pixels for very-high-resolution applications. Two PL-lifetimes obtained, imply Eu3+ distribution (i) on the nanocrystal surface, (ii) within host-lattice (spinel gallate); the distribution changes gradually with RA. Judd-Ofelt analysis and spectroscopic analysis of the PL have been discussed in detail.

AB - Rapid annealing (RA), an eco-friendly, soft processing technique was employed to manipulate emission properties of nanocrystalline ZnGa1.99Eu0.01O4. With RA processing that lasts only minutes, nanocrystals with weak emission were transformed into intense red-emitting phosphor. Effect of RA process parameters: temperature, duration, and cycling, on emission properties has been thoroughly studied. Compared to furnace annealing that usually lasts hours, RA, which involves simple and inexpensive apparatus, is shown to be very efficient and beneficial, as the total process time is only 15 min. This swift processing leads to enhanced quantum yield and higher colour purity (84%), without grain growth. Even after RA at 900 °C, crystallites measure ˜7-8 nm, suggesting that they might serve as pixels for very-high-resolution applications. Two PL-lifetimes obtained, imply Eu3+ distribution (i) on the nanocrystal surface, (ii) within host-lattice (spinel gallate); the distribution changes gradually with RA. Judd-Ofelt analysis and spectroscopic analysis of the PL have been discussed in detail.

UR - http://www.scopus.com/inward/record.url?scp=85068995968&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85068995968&partnerID=8YFLogxK

U2 - 10.1016/j.materresbull.2019.110544

DO - 10.1016/j.materresbull.2019.110544

M3 - Article

AN - SCOPUS:85068995968

VL - 119

JO - Materials Research Bulletin

JF - Materials Research Bulletin

SN - 0025-5408

M1 - 110544

ER -