Realization of ambipolar pentacene thin film transistors through dual interfacial engineering

Chuan Yi Yang, Shiau Shin Cheng, Chun Wei Ou, You Che Chuang, Meng Chyi Wu, Dhananjay, Chih Wei Chu

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Ambipolar conduction of a pentacene-based field-effect transistor can be attributed to dual interface engineering, which occurs at the dielectricsemiconductor interface and electrodesemiconductor interface. While the former was realized by utilizing a hydroxyl-free gate dielectric, the latter was made feasible by the use of appropriate metal source and drain electrodes. The field-effect hole and electron mobilities of 0.026 and 0.0023 cm2 V s, respectively, were extracted from the transfer characteristics of pentacene organic field-effect transistors utilizing polymethyl methacrylate as the trap-reduction interfacial modified layer and Al as the source and drain (SD) electrodes. We demonstrated a complementarylike inverter by using two identical ambipolar transistors and it can be operated both in the first and third quadrants with a high output voltage gain of around 10.

Original languageEnglish
Article number094519
JournalJournal of Applied Physics
Volume103
Issue number9
DOIs
Publication statusPublished - 26-05-2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Realization of ambipolar pentacene thin film transistors through dual interfacial engineering'. Together they form a unique fingerprint.

  • Cite this