Realization of In2 O3 thin film transistors through reactive evaporation process

Dhananjay, Chih Wei Chu

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

In2O3 thin films have been grown by reactive evaporation of indium in ambient oxygen. The films were structurally characterized by x-ray diffraction (XRD) and atomic force microscopy techniques. The results of XRD revealed that the films were polycrystalline in nature with preferred (222) orientation. The as-grown films were subjected to various annealing treatments to modulate the conductivity of the films for thin film transistors (TFTs). TFTs fabricated on Si O2 gate dielectric exhibited an on/off ratio of 104 and a field-effect mobility of 27 cm2 V s. High on-state current makes them potential candidates for flat-panel display devices.

Original languageEnglish
Article number132111
JournalApplied Physics Letters
Volume91
Issue number13
DOIs
Publication statusPublished - 05-10-2007

Fingerprint

transistors
evaporation
thin films
x ray diffraction
flat panel displays
display devices
indium
atomic force microscopy
conductivity
annealing
oxygen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{564af8265ab7494c97051cbb57fda189,
title = "Realization of In2 O3 thin film transistors through reactive evaporation process",
abstract = "In2O3 thin films have been grown by reactive evaporation of indium in ambient oxygen. The films were structurally characterized by x-ray diffraction (XRD) and atomic force microscopy techniques. The results of XRD revealed that the films were polycrystalline in nature with preferred (222) orientation. The as-grown films were subjected to various annealing treatments to modulate the conductivity of the films for thin film transistors (TFTs). TFTs fabricated on Si O2 gate dielectric exhibited an on/off ratio of 104 and a field-effect mobility of 27 cm2 V s. High on-state current makes them potential candidates for flat-panel display devices.",
author = "Dhananjay and Chu, {Chih Wei}",
year = "2007",
month = "10",
day = "5",
doi = "10.1063/1.2789788",
language = "English",
volume = "91",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",

}

Realization of In2 O3 thin film transistors through reactive evaporation process. / Dhananjay; Chu, Chih Wei.

In: Applied Physics Letters, Vol. 91, No. 13, 132111, 05.10.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Realization of In2 O3 thin film transistors through reactive evaporation process

AU - Dhananjay, null

AU - Chu, Chih Wei

PY - 2007/10/5

Y1 - 2007/10/5

N2 - In2O3 thin films have been grown by reactive evaporation of indium in ambient oxygen. The films were structurally characterized by x-ray diffraction (XRD) and atomic force microscopy techniques. The results of XRD revealed that the films were polycrystalline in nature with preferred (222) orientation. The as-grown films were subjected to various annealing treatments to modulate the conductivity of the films for thin film transistors (TFTs). TFTs fabricated on Si O2 gate dielectric exhibited an on/off ratio of 104 and a field-effect mobility of 27 cm2 V s. High on-state current makes them potential candidates for flat-panel display devices.

AB - In2O3 thin films have been grown by reactive evaporation of indium in ambient oxygen. The films were structurally characterized by x-ray diffraction (XRD) and atomic force microscopy techniques. The results of XRD revealed that the films were polycrystalline in nature with preferred (222) orientation. The as-grown films were subjected to various annealing treatments to modulate the conductivity of the films for thin film transistors (TFTs). TFTs fabricated on Si O2 gate dielectric exhibited an on/off ratio of 104 and a field-effect mobility of 27 cm2 V s. High on-state current makes them potential candidates for flat-panel display devices.

UR - http://www.scopus.com/inward/record.url?scp=34848902889&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34848902889&partnerID=8YFLogxK

U2 - 10.1063/1.2789788

DO - 10.1063/1.2789788

M3 - Article

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 132111

ER -