Reduction in electrical resistivity of bismuth selenide single crystal via Sn and Te co-doping

Ganesh Shridhar Hegde, A. N. Prabhu, C. F. Yang, Y. K. Kuo

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5 Citations (Scopus)

Abstract

The structural and thermoelectric transport properties of melt-grown Bi2Se3 single crystals are systematically investigated with the co-doping of Sn and Te in the temperature range 10–400 K. The powder X-ray diffraction and high-resolution X-ray diffraction studies confirm the hexagonal crystal structure with R 3‾ m space group. Images of the field emission scanning electron microscopy have shown crack-free smooth surface morphological features. Energy dispersive analysis of X-ray authorizes the chemical composition of elements in the samples. The degenerate semiconducting nature is observed in the entire series of samples with 6.8 times reduction in electrical resistivity for (Bi0.96Sn0.04)2Se2.7Te0.3 compared to the pristine Bi2Se3. The maximum ZT value of ∼0.32 is obtained for Bi2Se2.7Te0.3 single crystal at 400 K, about 7.4 times larger than that of Bi2Se3.

Original languageEnglish
Article number125675
JournalMaterials Chemistry and Physics
Volume278
DOIs
Publication statusPublished - 15-02-2022

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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