Reflectance and photoluminescence spectra of as grown and hydrogen and nitrogen incorporated tetrahedral amorphous carbon films deposited using an S bend filtered cathodic vacuum arc process

O. S. Panwar, Mohd Alim Khan, B. Bhattacharjee, A. K. Pal, B. S. Satyanarayana, P. N. Dixit, R. Bhattacharyya, M. Y. Khan

Research output: Contribution to journalArticle

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Abstract

The study of reflectance and photoluminescence (PL) spectra of as grown and also hydrogen and nitrogen incorporated tetrahedral amorphous carbon (ta-C) films, deposited using an S bend filtered cathodic vacuum arc process is reported here. First the effect of negative substrate bias on the properties of as grown ta-C films and next the effect of varying hydrogen and nitrogen partial pressure at a high substrate bias of - 300 V on the properties of hydrogen and nitrogen incorporated ta-C (ta-C:H and ta-C:N) films are reported for the first time. The values of the optical band gap (Eg) evaluated using the reflectance spectra were found to decrease with the increase of the substrate bias in the as grown ta-C films. Hydrogen incorporation up to 1.9 × 10- 2 Pa partial pressure in as grown ta-C films increased the values of Eg and beyond which the values of Eg decreased while the nitrogen incorporation up to 3.0 × 10- 1 Pa partial pressure has no effect on the Eg values. The PL spectra indicated a strong peak at ∼2.66 eV in as grown ta-C films deposited at - 20 V substrate bias. This main peak was found to shift to higher energy with the increase of the substrate bias up to - 200 V and thereafter the PL peak shifted towards the lower energy. Other peak at 3.135 eV starts appearing and this is found to start shifting to higher energy for films deposited at higher substrate bias. The intensity of the main PL peak was enhanced at low temperature and several other peaks started appearing in place of the broad peak at ∼3.16 eV. The peak width and area of both the main peak were found to decrease with the increase of substrate bias in as grown ta-C films and with the increase of the hydrogen and nitrogen partial pressure used in depositing ta-C:H and ta-C:N films. The current models on the source of luminescence in amorphous carbon have been discussed.

Original languageEnglish
Pages (from-to)1597-1606
Number of pages10
JournalThin Solid Films
Volume515
Issue number4
DOIs
Publication statusPublished - 05-12-2006
Externally publishedYes

Fingerprint

Carbon films
Amorphous carbon
Amorphous films
Hydrogen
Photoluminescence
Nitrogen
arcs
Vacuum
reflectance
photoluminescence
nitrogen
vacuum
carbon
hydrogen
Partial pressure
Substrates
partial pressure
Optical band gaps
energy
Luminescence

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Panwar, O. S. ; Khan, Mohd Alim ; Bhattacharjee, B. ; Pal, A. K. ; Satyanarayana, B. S. ; Dixit, P. N. ; Bhattacharyya, R. ; Khan, M. Y. / Reflectance and photoluminescence spectra of as grown and hydrogen and nitrogen incorporated tetrahedral amorphous carbon films deposited using an S bend filtered cathodic vacuum arc process. In: Thin Solid Films. 2006 ; Vol. 515, No. 4. pp. 1597-1606.
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Reflectance and photoluminescence spectra of as grown and hydrogen and nitrogen incorporated tetrahedral amorphous carbon films deposited using an S bend filtered cathodic vacuum arc process. / Panwar, O. S.; Khan, Mohd Alim; Bhattacharjee, B.; Pal, A. K.; Satyanarayana, B. S.; Dixit, P. N.; Bhattacharyya, R.; Khan, M. Y.

In: Thin Solid Films, Vol. 515, No. 4, 05.12.2006, p. 1597-1606.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Reflectance and photoluminescence spectra of as grown and hydrogen and nitrogen incorporated tetrahedral amorphous carbon films deposited using an S bend filtered cathodic vacuum arc process

AU - Panwar, O. S.

AU - Khan, Mohd Alim

AU - Bhattacharjee, B.

AU - Pal, A. K.

AU - Satyanarayana, B. S.

AU - Dixit, P. N.

AU - Bhattacharyya, R.

AU - Khan, M. Y.

PY - 2006/12/5

Y1 - 2006/12/5

N2 - The study of reflectance and photoluminescence (PL) spectra of as grown and also hydrogen and nitrogen incorporated tetrahedral amorphous carbon (ta-C) films, deposited using an S bend filtered cathodic vacuum arc process is reported here. First the effect of negative substrate bias on the properties of as grown ta-C films and next the effect of varying hydrogen and nitrogen partial pressure at a high substrate bias of - 300 V on the properties of hydrogen and nitrogen incorporated ta-C (ta-C:H and ta-C:N) films are reported for the first time. The values of the optical band gap (Eg) evaluated using the reflectance spectra were found to decrease with the increase of the substrate bias in the as grown ta-C films. Hydrogen incorporation up to 1.9 × 10- 2 Pa partial pressure in as grown ta-C films increased the values of Eg and beyond which the values of Eg decreased while the nitrogen incorporation up to 3.0 × 10- 1 Pa partial pressure has no effect on the Eg values. The PL spectra indicated a strong peak at ∼2.66 eV in as grown ta-C films deposited at - 20 V substrate bias. This main peak was found to shift to higher energy with the increase of the substrate bias up to - 200 V and thereafter the PL peak shifted towards the lower energy. Other peak at 3.135 eV starts appearing and this is found to start shifting to higher energy for films deposited at higher substrate bias. The intensity of the main PL peak was enhanced at low temperature and several other peaks started appearing in place of the broad peak at ∼3.16 eV. The peak width and area of both the main peak were found to decrease with the increase of substrate bias in as grown ta-C films and with the increase of the hydrogen and nitrogen partial pressure used in depositing ta-C:H and ta-C:N films. The current models on the source of luminescence in amorphous carbon have been discussed.

AB - The study of reflectance and photoluminescence (PL) spectra of as grown and also hydrogen and nitrogen incorporated tetrahedral amorphous carbon (ta-C) films, deposited using an S bend filtered cathodic vacuum arc process is reported here. First the effect of negative substrate bias on the properties of as grown ta-C films and next the effect of varying hydrogen and nitrogen partial pressure at a high substrate bias of - 300 V on the properties of hydrogen and nitrogen incorporated ta-C (ta-C:H and ta-C:N) films are reported for the first time. The values of the optical band gap (Eg) evaluated using the reflectance spectra were found to decrease with the increase of the substrate bias in the as grown ta-C films. Hydrogen incorporation up to 1.9 × 10- 2 Pa partial pressure in as grown ta-C films increased the values of Eg and beyond which the values of Eg decreased while the nitrogen incorporation up to 3.0 × 10- 1 Pa partial pressure has no effect on the Eg values. The PL spectra indicated a strong peak at ∼2.66 eV in as grown ta-C films deposited at - 20 V substrate bias. This main peak was found to shift to higher energy with the increase of the substrate bias up to - 200 V and thereafter the PL peak shifted towards the lower energy. Other peak at 3.135 eV starts appearing and this is found to start shifting to higher energy for films deposited at higher substrate bias. The intensity of the main PL peak was enhanced at low temperature and several other peaks started appearing in place of the broad peak at ∼3.16 eV. The peak width and area of both the main peak were found to decrease with the increase of substrate bias in as grown ta-C films and with the increase of the hydrogen and nitrogen partial pressure used in depositing ta-C:H and ta-C:N films. The current models on the source of luminescence in amorphous carbon have been discussed.

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