Resonant tunneling GaAs/AlGaAs quantum well structures for p-i-n photovoltaic cells

K. K. Nagaraja, M. P. Telenkov, I. P. Kazakov, S. A. Savinov, Yu A. Mityagin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This study is devoted to the development of resonant-tunneling structures of quantum wells implementing resonant matching of lower subbands of size quantization in an electric field of the p-i-n junction of photovoltaic elements. The method for controlling the lower subband position in quantum wells by introducing a series of the tunnel-transparent barriers into a quantum well is proposed. The possibility of varying the level position in deep quantum wells in a wide range up to the continuous spectrum is demonstrated on a grown model structure; in this case, agreement between calculated and experimental subband positions is achieved.

Original languageEnglish
Pages (from-to)72-76
Number of pages5
JournalBulletin of the Lebedev Physics Institute
Volume44
Issue number3
DOIs
Publication statusPublished - 01-03-2017

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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