Resonant tunneling GaAs/AlGaAs quantum well structures for p-i-n photovoltaic cells

K. K. Nagaraja, M. P. Telenkov, I. P. Kazakov, S. A. Savinov, Yu A. Mityagin

Research output: Contribution to journalArticle

Abstract

This study is devoted to the development of resonant-tunneling structures of quantum wells implementing resonant matching of lower subbands of size quantization in an electric field of the p-i-n junction of photovoltaic elements. The method for controlling the lower subband position in quantum wells by introducing a series of the tunnel-transparent barriers into a quantum well is proposed. The possibility of varying the level position in deep quantum wells in a wide range up to the continuous spectrum is demonstrated on a grown model structure; in this case, agreement between calculated and experimental subband positions is achieved.

Original languageEnglish
Pages (from-to)72-76
Number of pages5
JournalBulletin of the Lebedev Physics Institute
Volume44
Issue number3
DOIs
Publication statusPublished - 01-03-2017

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photovoltaic cells
resonant tunneling
aluminum gallium arsenides
quantum wells
p-i-n junctions
continuous spectra
tunnels
electric fields

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Nagaraja, K. K. ; Telenkov, M. P. ; Kazakov, I. P. ; Savinov, S. A. ; Mityagin, Yu A. / Resonant tunneling GaAs/AlGaAs quantum well structures for p-i-n photovoltaic cells. In: Bulletin of the Lebedev Physics Institute. 2017 ; Vol. 44, No. 3. pp. 72-76.
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Resonant tunneling GaAs/AlGaAs quantum well structures for p-i-n photovoltaic cells. / Nagaraja, K. K.; Telenkov, M. P.; Kazakov, I. P.; Savinov, S. A.; Mityagin, Yu A.

In: Bulletin of the Lebedev Physics Institute, Vol. 44, No. 3, 01.03.2017, p. 72-76.

Research output: Contribution to journalArticle

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