Robust room temperature ferromagnetism in epitaxial CoO thin film

D. S. Negi, B. Loukya, K. Dileep, R. Sahu, K. K. Nagaraja, N. Kumar, R. Datta

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Co vacancy (VCo) induced robust room temperature ferromagnetism (Ms ∼ 60 emu/cm3 and coercivity ∼ 603 Oe) is experimentally realized in rock-salt CoO epitaxial thin film (∼110 nm) grown by pulsed laser deposition. Co charge state is found to be higher ∼+3.2 (from Co L3/L2 white line ratio) and this is due to the V Co induced charge transfer from the neighboring Co-3d to O-2p states in order to compensate for the hole formation. O-K and cathodoluminescence spectra corroborate the existence of VCo and higher charge state. Temperature dependent magnetization and exchange bias experiments confirm the coexistence of ferromagnetic and antiferromagnetic phases.

Original languageEnglish
Article number242407
JournalApplied Physics Letters
Volume103
Issue number24
DOIs
Publication statusPublished - 09-12-2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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