Role of Ba in engineering band gap, photoluminescence and nonlinear optical properties of SnO2 nanostructures for photovoltaic and photocatalytic applications

M. S. Bannur, Albin Antony, K. I. Maddani, P. Poornesh, K. B. Manjunatha, Suresh D. Kulkarni, K. S. Choudhari

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2 Citations (Scopus)

Abstract

In this article, we present the role of Ba doping in tuning energy gap, photoluminescence (PL) and third-order optical nonlinearity χ(3) of SnO2 nanostructures. Surface morphology analysis indicates the fragmentation of larger grains upon Ba incorporation possibly caused by the lattice mismatch effects. X-ray diffraction reveals polycrystalline nature of the nanostructures with rutile tetragonal structure. A shift in preferential growth orientation plane (200, 211, 110) has been observed with increase in Ba concentration. PL spectroscopy studies confirms the crystallinity of the films ruling out the presence of Sn interstitials. The green luminescent center at 550 nm and trap emission at 578 nm are attributed to singly ionized charge state of the oxygen and defect levels in band gap. Relatively large change in the band gap (3.64 eV −3.13 eV) arises due to Ba doping points the credibility of SnO2 thin films for use in photovoltaic and photocatalytic applications. Third-optical nonlinearity of the films investigated by Z-scan technique shows χ(3) as high as 3.37 × 10−3 esu indicating the suitability of SnO2 nanostructures in nonlinear optical (NLO) devices such as optical power limiters and switches.

Original languageEnglish
Pages (from-to)156-164
Number of pages9
JournalSuperlattices and Microstructures
Volume122
DOIs
Publication statusPublished - 01-10-2018

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Nanostructures
Photoluminescence
Energy gap
power limiters
Optical properties
nonlinearity
engineering
photoluminescence
optical properties
Doping (additives)
rutile
crystallinity
fragmentation
interstitials
Lattice mismatch
Photoluminescence spectroscopy
switches
Limiters
tuning
traps

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Role of Ba in engineering band gap, photoluminescence and nonlinear optical properties of SnO2 nanostructures for photovoltaic and photocatalytic applications",
abstract = "In this article, we present the role of Ba doping in tuning energy gap, photoluminescence (PL) and third-order optical nonlinearity χ(3) of SnO2 nanostructures. Surface morphology analysis indicates the fragmentation of larger grains upon Ba incorporation possibly caused by the lattice mismatch effects. X-ray diffraction reveals polycrystalline nature of the nanostructures with rutile tetragonal structure. A shift in preferential growth orientation plane (200, 211, 110) has been observed with increase in Ba concentration. PL spectroscopy studies confirms the crystallinity of the films ruling out the presence of Sn interstitials. The green luminescent center at 550 nm and trap emission at 578 nm are attributed to singly ionized charge state of the oxygen and defect levels in band gap. Relatively large change in the band gap (3.64 eV −3.13 eV) arises due to Ba doping points the credibility of SnO2 thin films for use in photovoltaic and photocatalytic applications. Third-optical nonlinearity of the films investigated by Z-scan technique shows χ(3) as high as 3.37 × 10−3 esu indicating the suitability of SnO2 nanostructures in nonlinear optical (NLO) devices such as optical power limiters and switches.",
author = "Bannur, {M. S.} and Albin Antony and Maddani, {K. I.} and P. Poornesh and Manjunatha, {K. B.} and Kulkarni, {Suresh D.} and Choudhari, {K. S.}",
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T1 - Role of Ba in engineering band gap, photoluminescence and nonlinear optical properties of SnO2 nanostructures for photovoltaic and photocatalytic applications

AU - Bannur, M. S.

AU - Antony, Albin

AU - Maddani, K. I.

AU - Poornesh, P.

AU - Manjunatha, K. B.

AU - Kulkarni, Suresh D.

AU - Choudhari, K. S.

PY - 2018/10/1

Y1 - 2018/10/1

N2 - In this article, we present the role of Ba doping in tuning energy gap, photoluminescence (PL) and third-order optical nonlinearity χ(3) of SnO2 nanostructures. Surface morphology analysis indicates the fragmentation of larger grains upon Ba incorporation possibly caused by the lattice mismatch effects. X-ray diffraction reveals polycrystalline nature of the nanostructures with rutile tetragonal structure. A shift in preferential growth orientation plane (200, 211, 110) has been observed with increase in Ba concentration. PL spectroscopy studies confirms the crystallinity of the films ruling out the presence of Sn interstitials. The green luminescent center at 550 nm and trap emission at 578 nm are attributed to singly ionized charge state of the oxygen and defect levels in band gap. Relatively large change in the band gap (3.64 eV −3.13 eV) arises due to Ba doping points the credibility of SnO2 thin films for use in photovoltaic and photocatalytic applications. Third-optical nonlinearity of the films investigated by Z-scan technique shows χ(3) as high as 3.37 × 10−3 esu indicating the suitability of SnO2 nanostructures in nonlinear optical (NLO) devices such as optical power limiters and switches.

AB - In this article, we present the role of Ba doping in tuning energy gap, photoluminescence (PL) and third-order optical nonlinearity χ(3) of SnO2 nanostructures. Surface morphology analysis indicates the fragmentation of larger grains upon Ba incorporation possibly caused by the lattice mismatch effects. X-ray diffraction reveals polycrystalline nature of the nanostructures with rutile tetragonal structure. A shift in preferential growth orientation plane (200, 211, 110) has been observed with increase in Ba concentration. PL spectroscopy studies confirms the crystallinity of the films ruling out the presence of Sn interstitials. The green luminescent center at 550 nm and trap emission at 578 nm are attributed to singly ionized charge state of the oxygen and defect levels in band gap. Relatively large change in the band gap (3.64 eV −3.13 eV) arises due to Ba doping points the credibility of SnO2 thin films for use in photovoltaic and photocatalytic applications. Third-optical nonlinearity of the films investigated by Z-scan technique shows χ(3) as high as 3.37 × 10−3 esu indicating the suitability of SnO2 nanostructures in nonlinear optical (NLO) devices such as optical power limiters and switches.

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