Room Temperature Processed ZnO Thin Film Transistors Grown by Magnetron Sputtering Using Zirconium Oxide Gate Dielectric

Muhammed A. V. Ali, Dhananjaya Kekuda

Research output: Contribution to journalArticle

Abstract

A room temperature-processed ZnO thin film transistors (TFT) with zirconium oxide (ZrO2) are demonstrated as a gate dielectric, fabricated by dc magnetron sputtering. The oxygen flow rate dependence of ZrO2 thin films on the optical, structural, and electrical properties is investigated. Nanocrystalline ZrO2 films with a grain size of 6.2–16.8 nm are obtained at room temperature and grain size is found to be a function of oxygen flow rate during deposition. The electrical characterization of the gate dielectric is carried out using the device structure Al-ZrO2-Al. The leakage properties and dielectric constants are computed for the gate dielectric grown at different oxygen flow rates. Further, bottom gate staggered ZnO thin film transistors are fabricated with the configuration glass/Al/ZrO2/ZnO/Al and the devices exhibit a field effect mobility of ≈43 cm2 V−1 s−1, a low operating voltage of 1.5 V and on/off ratio of 103. This work could lead to the possibility of low operating voltage TFTs for the next generation display technologies.

Original languageEnglish
Article number1700113
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume214
Issue number12
DOIs
Publication statusPublished - 01-12-2017

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Gate dielectrics
Thin film transistors
zirconium oxides
Zirconia
Magnetron sputtering
magnetron sputtering
transistors
Flow rate
Oxygen
flow velocity
room temperature
thin films
oxygen
grain size
Electric potential
Temperature
Structural properties
Electric properties
electric potential
Permittivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Room Temperature Processed ZnO Thin Film Transistors Grown by Magnetron Sputtering Using Zirconium Oxide Gate Dielectric",
abstract = "A room temperature-processed ZnO thin film transistors (TFT) with zirconium oxide (ZrO2) are demonstrated as a gate dielectric, fabricated by dc magnetron sputtering. The oxygen flow rate dependence of ZrO2 thin films on the optical, structural, and electrical properties is investigated. Nanocrystalline ZrO2 films with a grain size of 6.2–16.8 nm are obtained at room temperature and grain size is found to be a function of oxygen flow rate during deposition. The electrical characterization of the gate dielectric is carried out using the device structure Al-ZrO2-Al. The leakage properties and dielectric constants are computed for the gate dielectric grown at different oxygen flow rates. Further, bottom gate staggered ZnO thin film transistors are fabricated with the configuration glass/Al/ZrO2/ZnO/Al and the devices exhibit a field effect mobility of ≈43 cm2 V−1 s−1, a low operating voltage of 1.5 V and on/off ratio of 103. This work could lead to the possibility of low operating voltage TFTs for the next generation display technologies.",
author = "{A. V. Ali}, Muhammed and Dhananjaya Kekuda",
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N2 - A room temperature-processed ZnO thin film transistors (TFT) with zirconium oxide (ZrO2) are demonstrated as a gate dielectric, fabricated by dc magnetron sputtering. The oxygen flow rate dependence of ZrO2 thin films on the optical, structural, and electrical properties is investigated. Nanocrystalline ZrO2 films with a grain size of 6.2–16.8 nm are obtained at room temperature and grain size is found to be a function of oxygen flow rate during deposition. The electrical characterization of the gate dielectric is carried out using the device structure Al-ZrO2-Al. The leakage properties and dielectric constants are computed for the gate dielectric grown at different oxygen flow rates. Further, bottom gate staggered ZnO thin film transistors are fabricated with the configuration glass/Al/ZrO2/ZnO/Al and the devices exhibit a field effect mobility of ≈43 cm2 V−1 s−1, a low operating voltage of 1.5 V and on/off ratio of 103. This work could lead to the possibility of low operating voltage TFTs for the next generation display technologies.

AB - A room temperature-processed ZnO thin film transistors (TFT) with zirconium oxide (ZrO2) are demonstrated as a gate dielectric, fabricated by dc magnetron sputtering. The oxygen flow rate dependence of ZrO2 thin films on the optical, structural, and electrical properties is investigated. Nanocrystalline ZrO2 films with a grain size of 6.2–16.8 nm are obtained at room temperature and grain size is found to be a function of oxygen flow rate during deposition. The electrical characterization of the gate dielectric is carried out using the device structure Al-ZrO2-Al. The leakage properties and dielectric constants are computed for the gate dielectric grown at different oxygen flow rates. Further, bottom gate staggered ZnO thin film transistors are fabricated with the configuration glass/Al/ZrO2/ZnO/Al and the devices exhibit a field effect mobility of ≈43 cm2 V−1 s−1, a low operating voltage of 1.5 V and on/off ratio of 103. This work could lead to the possibility of low operating voltage TFTs for the next generation display technologies.

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