TY - JOUR
T1 - Self-powered transparent ultraviolet photo-sensors based on bilayer p-NiO/n-Zn(1−x) Sn(x)O heterojunction
AU - Bhat, Prashant
AU - Salunkhe, Parashurama
AU - Murari, M. S.
AU - Kekuda, Dhananjaya
N1 - Funding Information:
The authors are thankful to the Manipal Academy of Higher Education for the financial support under the T.M.A Pai Ph.D. scholarship program and Intramural Fellowship. A part of this research work has used the facility at IISc-CeNSE, funded by the Ministry of Electronics and Information Technology (MeitY), Government of India.
Publisher Copyright:
© 2022 Elsevier B.V.
PY - 2022/5/1
Y1 - 2022/5/1
N2 - A heterostructure using p-NiO/n-Zn(1−x)Sn(x)O (x = 0.14) (TZO) junction was successfully fabricated by DC-magnetron reactive sputtering technique for UV sensing. Under weak illumination of UV radiation (365 nm, 0.06 mW/cm2), the fabricated device had shown a photo responsivity of ~3.00 mA W−1 and quantum efficiencies about 1.01% even in zero bias condition. The device also exhibited impressive photo response about 19.70 mA W−1 and external quantum efficiencies nearly 6.69% at low reverse external bias of 3 V. The fabricated hybrid hetero structured UV photosensors had also shown great detectivity and transient speed of response about 8.6 × 1010 Jones, 2.3 s/1.4 s at zero bias respectively. Hence these observations suggest that p-NiO/n-TZO heterojunction could be used as novel, self-powered highly transparent photosensors for detecting UV radiation.
AB - A heterostructure using p-NiO/n-Zn(1−x)Sn(x)O (x = 0.14) (TZO) junction was successfully fabricated by DC-magnetron reactive sputtering technique for UV sensing. Under weak illumination of UV radiation (365 nm, 0.06 mW/cm2), the fabricated device had shown a photo responsivity of ~3.00 mA W−1 and quantum efficiencies about 1.01% even in zero bias condition. The device also exhibited impressive photo response about 19.70 mA W−1 and external quantum efficiencies nearly 6.69% at low reverse external bias of 3 V. The fabricated hybrid hetero structured UV photosensors had also shown great detectivity and transient speed of response about 8.6 × 1010 Jones, 2.3 s/1.4 s at zero bias respectively. Hence these observations suggest that p-NiO/n-TZO heterojunction could be used as novel, self-powered highly transparent photosensors for detecting UV radiation.
UR - http://www.scopus.com/inward/record.url?scp=85125575535&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85125575535&partnerID=8YFLogxK
U2 - 10.1016/j.sna.2022.113479
DO - 10.1016/j.sna.2022.113479
M3 - Article
AN - SCOPUS:85125575535
VL - 338
JO - Sensors and Actuators, A: Physical
JF - Sensors and Actuators, A: Physical
SN - 0924-4247
M1 - 113479
ER -