Spark plasma sintering technique

an alternative method to enhance ZT values of Sb doped Cu2SnSe3

K. Shyam Prasad, Ashok Rao, Ruchi Bhardwaj, Kishor Kumar Johri, Chia Chi Chang, Yung Kang Kuo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Sb doped Cu2Sn1−xSbxSe3 (0 ≤ x ≤ 0.04) compounds have been fabricated by spark plasma sintering technique for the investigation of their thermoelelctric properties in the temperature range 10–400 K. The conduction mechanism of electrical resistivity reveals that small polaron hopping model is valid in the high-temperature regime and variable range hopping model in low-temperature regime. The positive values of Seebeck coefficient (S) for Cu2Sn1−xSbxSe3 (0 ≤ x ≤ 0.04) samples in the entire temperature range indicates that the majority charge carriers are holes. The electronic thermal conductivity (κe) was estimated by Wiedmann-Franz law and found that the contribution of κe to the total κ is < 1%, suggesting that the heat conduction for presently studied Cu2Sn1−xSbxSe3 (0 ≤ x ≤ 0.04) samples is mainly associated to the lattice phonons. The highest ZT value for the Cu2Sn0.96Sb0.04Se3 sample was 0.044 at 400 K, which is approximately four times that of the Cu2SnSe3 sample and an order of magnitude larger than the samples prepared by the conventional solid-state method. Also, the thermoelectric compatibility factor of Cu2Sn0.96Sb0.04Se3 was found to be about 1 per V.

Original languageEnglish
Pages (from-to)13200-13208
Number of pages9
JournalJournal of Materials Science: Materials in Electronics
Volume29
Issue number15
DOIs
Publication statusPublished - 01-08-2018

Fingerprint

Spark plasma sintering
sparks
sintering
Gene Conversion
Temperature
Seebeck coefficient
Phonons
Charge carriers
Heat conduction
Thermal conductivity
Seebeck effect
conductive heat transfer
compatibility
charge carriers
phonons
thermal conductivity
solid state
conduction
electrical resistivity
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Prasad, K. Shyam ; Rao, Ashok ; Bhardwaj, Ruchi ; Johri, Kishor Kumar ; Chang, Chia Chi ; Kuo, Yung Kang. / Spark plasma sintering technique : an alternative method to enhance ZT values of Sb doped Cu2SnSe3. In: Journal of Materials Science: Materials in Electronics. 2018 ; Vol. 29, No. 15. pp. 13200-13208.
@article{511d92501180420e8ecd65613a7d8a22,
title = "Spark plasma sintering technique: an alternative method to enhance ZT values of Sb doped Cu2SnSe3",
abstract = "Sb doped Cu2Sn1−xSbxSe3 (0 ≤ x ≤ 0.04) compounds have been fabricated by spark plasma sintering technique for the investigation of their thermoelelctric properties in the temperature range 10–400 K. The conduction mechanism of electrical resistivity reveals that small polaron hopping model is valid in the high-temperature regime and variable range hopping model in low-temperature regime. The positive values of Seebeck coefficient (S) for Cu2Sn1−xSbxSe3 (0 ≤ x ≤ 0.04) samples in the entire temperature range indicates that the majority charge carriers are holes. The electronic thermal conductivity (κe) was estimated by Wiedmann-Franz law and found that the contribution of κe to the total κ is < 1{\%}, suggesting that the heat conduction for presently studied Cu2Sn1−xSbxSe3 (0 ≤ x ≤ 0.04) samples is mainly associated to the lattice phonons. The highest ZT value for the Cu2Sn0.96Sb0.04Se3 sample was 0.044 at 400 K, which is approximately four times that of the Cu2SnSe3 sample and an order of magnitude larger than the samples prepared by the conventional solid-state method. Also, the thermoelectric compatibility factor of Cu2Sn0.96Sb0.04Se3 was found to be about 1 per V.",
author = "Prasad, {K. Shyam} and Ashok Rao and Ruchi Bhardwaj and Johri, {Kishor Kumar} and Chang, {Chia Chi} and Kuo, {Yung Kang}",
year = "2018",
month = "8",
day = "1",
doi = "10.1007/s10854-018-9444-y",
language = "English",
volume = "29",
pages = "13200--13208",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "15",

}

Spark plasma sintering technique : an alternative method to enhance ZT values of Sb doped Cu2SnSe3. / Prasad, K. Shyam; Rao, Ashok; Bhardwaj, Ruchi; Johri, Kishor Kumar; Chang, Chia Chi; Kuo, Yung Kang.

In: Journal of Materials Science: Materials in Electronics, Vol. 29, No. 15, 01.08.2018, p. 13200-13208.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Spark plasma sintering technique

T2 - an alternative method to enhance ZT values of Sb doped Cu2SnSe3

AU - Prasad, K. Shyam

AU - Rao, Ashok

AU - Bhardwaj, Ruchi

AU - Johri, Kishor Kumar

AU - Chang, Chia Chi

AU - Kuo, Yung Kang

PY - 2018/8/1

Y1 - 2018/8/1

N2 - Sb doped Cu2Sn1−xSbxSe3 (0 ≤ x ≤ 0.04) compounds have been fabricated by spark plasma sintering technique for the investigation of their thermoelelctric properties in the temperature range 10–400 K. The conduction mechanism of electrical resistivity reveals that small polaron hopping model is valid in the high-temperature regime and variable range hopping model in low-temperature regime. The positive values of Seebeck coefficient (S) for Cu2Sn1−xSbxSe3 (0 ≤ x ≤ 0.04) samples in the entire temperature range indicates that the majority charge carriers are holes. The electronic thermal conductivity (κe) was estimated by Wiedmann-Franz law and found that the contribution of κe to the total κ is < 1%, suggesting that the heat conduction for presently studied Cu2Sn1−xSbxSe3 (0 ≤ x ≤ 0.04) samples is mainly associated to the lattice phonons. The highest ZT value for the Cu2Sn0.96Sb0.04Se3 sample was 0.044 at 400 K, which is approximately four times that of the Cu2SnSe3 sample and an order of magnitude larger than the samples prepared by the conventional solid-state method. Also, the thermoelectric compatibility factor of Cu2Sn0.96Sb0.04Se3 was found to be about 1 per V.

AB - Sb doped Cu2Sn1−xSbxSe3 (0 ≤ x ≤ 0.04) compounds have been fabricated by spark plasma sintering technique for the investigation of their thermoelelctric properties in the temperature range 10–400 K. The conduction mechanism of electrical resistivity reveals that small polaron hopping model is valid in the high-temperature regime and variable range hopping model in low-temperature regime. The positive values of Seebeck coefficient (S) for Cu2Sn1−xSbxSe3 (0 ≤ x ≤ 0.04) samples in the entire temperature range indicates that the majority charge carriers are holes. The electronic thermal conductivity (κe) was estimated by Wiedmann-Franz law and found that the contribution of κe to the total κ is < 1%, suggesting that the heat conduction for presently studied Cu2Sn1−xSbxSe3 (0 ≤ x ≤ 0.04) samples is mainly associated to the lattice phonons. The highest ZT value for the Cu2Sn0.96Sb0.04Se3 sample was 0.044 at 400 K, which is approximately four times that of the Cu2SnSe3 sample and an order of magnitude larger than the samples prepared by the conventional solid-state method. Also, the thermoelectric compatibility factor of Cu2Sn0.96Sb0.04Se3 was found to be about 1 per V.

UR - http://www.scopus.com/inward/record.url?scp=85048256355&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048256355&partnerID=8YFLogxK

U2 - 10.1007/s10854-018-9444-y

DO - 10.1007/s10854-018-9444-y

M3 - Article

VL - 29

SP - 13200

EP - 13208

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 15

ER -