Spontaneous growth of In x Ga 1-x N nanostructures directly on c-plane sapphire by plasma assisted molecular beam epitaxy

Arpan De, K. K. Nagaraja, Malleswararao Tangi, S. M. Shivaprasad

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4 Citations (Scopus)


Effect of growth temperature on the morphology, structural and optical properties of In x Ga 1-x N layers grown under nitrogen-rich conditions, by plasma assisted molecular beam epitaxy, on c-plane Sapphire have been studied. By varying the substrate temperature we are able to obtain tapered as well as flat-top nanorod and interconnected random network morphology. An increase of indium incorporation, determined by HRXRD, from 1% to 23% with decrease in growth temperature has been obtained. Room temperature photoluminescence (PL) and absorption measurements on the grown samples follow Vegard's law. A band bowing parameter of 1.54 eV has been determined for the observed composition range. A good quality - In x Ga N x-1 N film having no phase separation with significant PL emission intensity is obtained at a growth temperature much lower than that conventionally used in MBE for - In x GaN x-1 N growth on sapphire.

Original languageEnglish
Article number035019
JournalMaterials Research Express
Issue number3
Publication statusPublished - 01-09-2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Polymers and Plastics
  • Metals and Alloys

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