Spontaneous growth of In x Ga 1-x N nanostructures directly on c-plane sapphire by plasma assisted molecular beam epitaxy

Arpan De, K. K. Nagaraja, Malleswararao Tangi, S. M. Shivaprasad

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Effect of growth temperature on the morphology, structural and optical properties of In x Ga 1-x N layers grown under nitrogen-rich conditions, by plasma assisted molecular beam epitaxy, on c-plane Sapphire have been studied. By varying the substrate temperature we are able to obtain tapered as well as flat-top nanorod and interconnected random network morphology. An increase of indium incorporation, determined by HRXRD, from 1% to 23% with decrease in growth temperature has been obtained. Room temperature photoluminescence (PL) and absorption measurements on the grown samples follow Vegard's law. A band bowing parameter of 1.54 eV has been determined for the observed composition range. A good quality - In x Ga N x-1 N film having no phase separation with significant PL emission intensity is obtained at a growth temperature much lower than that conventionally used in MBE for - In x GaN x-1 N growth on sapphire.

Original languageEnglish
Article number035019
JournalMaterials Research Express
Volume1
Issue number3
DOIs
Publication statusPublished - 01-09-2014

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Aluminum Oxide
Growth temperature
Molecular beam epitaxy
Sapphire
Nanostructures
Plasmas
Photoluminescence
Bending (forming)
Indium
Nanorods
Phase separation
Structural properties
Nitrogen
Optical properties
Temperature
Substrates
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Polymers and Plastics
  • Metals and Alloys

Cite this

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title = "Spontaneous growth of In x Ga 1-x N nanostructures directly on c-plane sapphire by plasma assisted molecular beam epitaxy",
abstract = "Effect of growth temperature on the morphology, structural and optical properties of In x Ga 1-x N layers grown under nitrogen-rich conditions, by plasma assisted molecular beam epitaxy, on c-plane Sapphire have been studied. By varying the substrate temperature we are able to obtain tapered as well as flat-top nanorod and interconnected random network morphology. An increase of indium incorporation, determined by HRXRD, from 1{\%} to 23{\%} with decrease in growth temperature has been obtained. Room temperature photoluminescence (PL) and absorption measurements on the grown samples follow Vegard's law. A band bowing parameter of 1.54 eV has been determined for the observed composition range. A good quality - In x Ga N x-1 N film having no phase separation with significant PL emission intensity is obtained at a growth temperature much lower than that conventionally used in MBE for - In x GaN x-1 N growth on sapphire.",
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Spontaneous growth of In x Ga 1-x N nanostructures directly on c-plane sapphire by plasma assisted molecular beam epitaxy. / De, Arpan; Nagaraja, K. K.; Tangi, Malleswararao; Shivaprasad, S. M.

In: Materials Research Express, Vol. 1, No. 3, 035019, 01.09.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Spontaneous growth of In x Ga 1-x N nanostructures directly on c-plane sapphire by plasma assisted molecular beam epitaxy

AU - De, Arpan

AU - Nagaraja, K. K.

AU - Tangi, Malleswararao

AU - Shivaprasad, S. M.

PY - 2014/9/1

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AB - Effect of growth temperature on the morphology, structural and optical properties of In x Ga 1-x N layers grown under nitrogen-rich conditions, by plasma assisted molecular beam epitaxy, on c-plane Sapphire have been studied. By varying the substrate temperature we are able to obtain tapered as well as flat-top nanorod and interconnected random network morphology. An increase of indium incorporation, determined by HRXRD, from 1% to 23% with decrease in growth temperature has been obtained. Room temperature photoluminescence (PL) and absorption measurements on the grown samples follow Vegard's law. A band bowing parameter of 1.54 eV has been determined for the observed composition range. A good quality - In x Ga N x-1 N film having no phase separation with significant PL emission intensity is obtained at a growth temperature much lower than that conventionally used in MBE for - In x GaN x-1 N growth on sapphire.

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