Effect of growth temperature on the morphology, structural and optical properties of In x Ga 1-x N layers grown under nitrogen-rich conditions, by plasma assisted molecular beam epitaxy, on c-plane Sapphire have been studied. By varying the substrate temperature we are able to obtain tapered as well as flat-top nanorod and interconnected random network morphology. An increase of indium incorporation, determined by HRXRD, from 1% to 23% with decrease in growth temperature has been obtained. Room temperature photoluminescence (PL) and absorption measurements on the grown samples follow Vegard's law. A band bowing parameter of 1.54 eV has been determined for the observed composition range. A good quality - In x Ga N x-1 N film having no phase separation with significant PL emission intensity is obtained at a growth temperature much lower than that conventionally used in MBE for - In x GaN x-1 N growth on sapphire.
|Journal||Materials Research Express|
|Publication status||Published - 01-09-2014|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Polymers and Plastics
- Metals and Alloys