Structural and optical property characterization of epitaxial ZnO:Te thin films grown by pulsed laser deposition

R. Sahu, K. Dileep, D. S. Negi, K. K. Nagaraja, S. Shetty, R. Datta

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have investigated the Te atom incorporation, solubility, structural features and the corresponding optical property of epitaxial ZnO:Te thin film grown on c-plane sapphire by pulsed laser deposition. Incorporation of Te at the oxygen (Te O ) or zinc (Te Zn ) site can be controlled through the deposition scheme to transfer Te during the film growth. Solubility of Te at the oxygen site is strongly dependent on the growth temperature and a maximum of ∼4 at% Te is obtained at 400 1C with the film remained to be in epitaxial form. Lowering the temperature further increases Te incorporation but films turn out to be amorphous. For Te at the Zn site a maximum of ∼3.4 at% is achieved with the film to be in the epitaxial form with tilt and phase separation is observed beyond this composition. Band gap decreases with Te incorporation both in the oxygen and zinc sites but decrease in band gap is found to be pronounced and composition dependent for the former case. & 2014 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)69-76
Number of pages8
JournalJournal of Crystal Growth
Volume410
DOIs
Publication statusPublished - 15-01-2015

Fingerprint

Pulsed laser deposition
pulsed laser deposition
Structural properties
Optical properties
Oxygen
optical properties
Thin films
Zinc
Energy gap
thin films
Solubility
oxygen
solubility
Aluminum Oxide
zinc
Growth temperature
Film growth
Chemical analysis
Sapphire
Phase separation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

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abstract = "We have investigated the Te atom incorporation, solubility, structural features and the corresponding optical property of epitaxial ZnO:Te thin film grown on c-plane sapphire by pulsed laser deposition. Incorporation of Te at the oxygen (Te O ) or zinc (Te Zn ) site can be controlled through the deposition scheme to transfer Te during the film growth. Solubility of Te at the oxygen site is strongly dependent on the growth temperature and a maximum of ∼4 at{\%} Te is obtained at 400 1C with the film remained to be in epitaxial form. Lowering the temperature further increases Te incorporation but films turn out to be amorphous. For Te at the Zn site a maximum of ∼3.4 at{\%} is achieved with the film to be in the epitaxial form with tilt and phase separation is observed beyond this composition. Band gap decreases with Te incorporation both in the oxygen and zinc sites but decrease in band gap is found to be pronounced and composition dependent for the former case. & 2014 Elsevier B.V. All rights reserved.",
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Structural and optical property characterization of epitaxial ZnO:Te thin films grown by pulsed laser deposition. / Sahu, R.; Dileep, K.; Negi, D. S.; Nagaraja, K. K.; Shetty, S.; Datta, R.

In: Journal of Crystal Growth, Vol. 410, 15.01.2015, p. 69-76.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Structural and optical property characterization of epitaxial ZnO:Te thin films grown by pulsed laser deposition

AU - Sahu, R.

AU - Dileep, K.

AU - Negi, D. S.

AU - Nagaraja, K. K.

AU - Shetty, S.

AU - Datta, R.

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N2 - We have investigated the Te atom incorporation, solubility, structural features and the corresponding optical property of epitaxial ZnO:Te thin film grown on c-plane sapphire by pulsed laser deposition. Incorporation of Te at the oxygen (Te O ) or zinc (Te Zn ) site can be controlled through the deposition scheme to transfer Te during the film growth. Solubility of Te at the oxygen site is strongly dependent on the growth temperature and a maximum of ∼4 at% Te is obtained at 400 1C with the film remained to be in epitaxial form. Lowering the temperature further increases Te incorporation but films turn out to be amorphous. For Te at the Zn site a maximum of ∼3.4 at% is achieved with the film to be in the epitaxial form with tilt and phase separation is observed beyond this composition. Band gap decreases with Te incorporation both in the oxygen and zinc sites but decrease in band gap is found to be pronounced and composition dependent for the former case. & 2014 Elsevier B.V. All rights reserved.

AB - We have investigated the Te atom incorporation, solubility, structural features and the corresponding optical property of epitaxial ZnO:Te thin film grown on c-plane sapphire by pulsed laser deposition. Incorporation of Te at the oxygen (Te O ) or zinc (Te Zn ) site can be controlled through the deposition scheme to transfer Te during the film growth. Solubility of Te at the oxygen site is strongly dependent on the growth temperature and a maximum of ∼4 at% Te is obtained at 400 1C with the film remained to be in epitaxial form. Lowering the temperature further increases Te incorporation but films turn out to be amorphous. For Te at the Zn site a maximum of ∼3.4 at% is achieved with the film to be in the epitaxial form with tilt and phase separation is observed beyond this composition. Band gap decreases with Te incorporation both in the oxygen and zinc sites but decrease in band gap is found to be pronounced and composition dependent for the former case. & 2014 Elsevier B.V. All rights reserved.

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