In this paper, the gamma irradiation effects on the structural and optical properties of N-doped 4H-SiC (n-4H-SiC) is presented up to a cumulative gamma radiation dose of 1500 kGy. The studies showed marginal and inconsistent variation in the c- and a-axis lattice constants of 4H-SiC due to the accumulation of gamma-induced defect states. The modifications in the longitudinal optical plasmon-phonon coupled (LOPC) modes, Biedermann absorption bands, Urbach energy (EU) and defect related photoluminescence (DPL) bands are discussed at different (500, 1000 and 1500 kGy) irradiation doses. Despite these effects, the overall gamma-induced disorder (1-Anorm) and variation in the free carrier concentrations (n) are found to be negligible and demonstrating the radiation resistant property of n-4H-SiC under gamma radiation environment.
|Number of pages||6|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 01-02-2019|
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics