Structural and optical studies of gamma irradiated N-doped 4H-SiC

Indudhar Panduranga Vali, Pramoda Kumara Shetty, M. G. Mahesha, V. G. Sathe, D. M. Phase, R. J. Choudhary

Research output: Contribution to journalArticle

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Abstract

In this paper, the gamma irradiation effects on the structural and optical properties of N-doped 4H-SiC (n-4H-SiC) is presented up to a cumulative gamma radiation dose of 1500 kGy. The studies showed marginal and inconsistent variation in the c- and a-axis lattice constants of 4H-SiC due to the accumulation of gamma-induced defect states. The modifications in the longitudinal optical plasmon-phonon coupled (LOPC) modes, Biedermann absorption bands, Urbach energy (EU) and defect related photoluminescence (DPL) bands are discussed at different (500, 1000 and 1500 kGy) irradiation doses. Despite these effects, the overall gamma-induced disorder (1-Anorm) and variation in the free carrier concentrations (n) are found to be negligible and demonstrating the radiation resistant property of n-4H-SiC under gamma radiation environment.

Original languageEnglish
Pages (from-to)101-106
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume440
DOIs
Publication statusPublished - 01-02-2019

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Gamma rays
Dosimetry
Irradiation
gamma rays
dosage
Defects
irradiation
defects
coupled modes
Lattice constants
Carrier concentration
Structural properties
Absorption spectra
Photoluminescence
Optical properties
disorders
absorption spectra
photoluminescence
Radiation
optical properties

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

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title = "Structural and optical studies of gamma irradiated N-doped 4H-SiC",
abstract = "In this paper, the gamma irradiation effects on the structural and optical properties of N-doped 4H-SiC (n-4H-SiC) is presented up to a cumulative gamma radiation dose of 1500 kGy. The studies showed marginal and inconsistent variation in the c- and a-axis lattice constants of 4H-SiC due to the accumulation of gamma-induced defect states. The modifications in the longitudinal optical plasmon-phonon coupled (LOPC) modes, Biedermann absorption bands, Urbach energy (EU) and defect related photoluminescence (DPL) bands are discussed at different (500, 1000 and 1500 kGy) irradiation doses. Despite these effects, the overall gamma-induced disorder (1-Anorm) and variation in the free carrier concentrations (n) are found to be negligible and demonstrating the radiation resistant property of n-4H-SiC under gamma radiation environment.",
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Structural and optical studies of gamma irradiated N-doped 4H-SiC. / Vali, Indudhar Panduranga; Shetty, Pramoda Kumara; Mahesha, M. G.; Sathe, V. G.; Phase, D. M.; Choudhary, R. J.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 440, 01.02.2019, p. 101-106.

Research output: Contribution to journalArticle

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AU - Vali, Indudhar Panduranga

AU - Shetty, Pramoda Kumara

AU - Mahesha, M. G.

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AU - Phase, D. M.

AU - Choudhary, R. J.

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AB - In this paper, the gamma irradiation effects on the structural and optical properties of N-doped 4H-SiC (n-4H-SiC) is presented up to a cumulative gamma radiation dose of 1500 kGy. The studies showed marginal and inconsistent variation in the c- and a-axis lattice constants of 4H-SiC due to the accumulation of gamma-induced defect states. The modifications in the longitudinal optical plasmon-phonon coupled (LOPC) modes, Biedermann absorption bands, Urbach energy (EU) and defect related photoluminescence (DPL) bands are discussed at different (500, 1000 and 1500 kGy) irradiation doses. Despite these effects, the overall gamma-induced disorder (1-Anorm) and variation in the free carrier concentrations (n) are found to be negligible and demonstrating the radiation resistant property of n-4H-SiC under gamma radiation environment.

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