Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes

Gowrish K. Rao, Kasturi V. Bangera, G. K. Shivakumar

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I-V characteristics. The C-V characteristics of the heterojunction diodes were studied to determine the barrier height, carrier concentration and thickness of the depletion region in the heterojunction. A theoretical band diagram of the heterojunction was drawn based on Anderson's model.

Original languageEnglish
Pages (from-to)100-103
Number of pages4
JournalSolid-State Electronics
Volume56
Issue number1
DOIs
Publication statusPublished - 01-02-2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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