Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes

Gowrish K. Rao, Kasturi V. Bangera, G. K. Shivakumar

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I-V characteristics. The C-V characteristics of the heterojunction diodes were studied to determine the barrier height, carrier concentration and thickness of the depletion region in the heterojunction. A theoretical band diagram of the heterojunction was drawn based on Anderson's model.

Original languageEnglish
Pages (from-to)100-103
Number of pages4
JournalSolid-State Electronics
Volume56
Issue number1
DOIs
Publication statusPublished - 01-02-2011

Fingerprint

Heterojunctions
heterojunctions
Diodes
diodes
Vacuum
vacuum
Vacuum deposition
vacuum deposition
Carrier concentration
depletion
diagrams
conduction
Fabrication
fabrication

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Rao, Gowrish K. ; Bangera, Kasturi V. ; Shivakumar, G. K. / Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes. In: Solid-State Electronics. 2011 ; Vol. 56, No. 1. pp. 100-103.
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Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes. / Rao, Gowrish K.; Bangera, Kasturi V.; Shivakumar, G. K.

In: Solid-State Electronics, Vol. 56, No. 1, 01.02.2011, p. 100-103.

Research output: Contribution to journalArticle

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