p-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I-V and C-V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge density and thickness of the depletion region in the heterojunction. The bandgap and activation energies of n-ZnSe and p-ZnTe were also determined and a theoretical band diagram of p-ZnTe/n-ZnSe heterojunction was drawn based on Anderson's model.
|Number of pages||4|
|Publication status||Published - 01-08-2010|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering