Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes

Gowrish K. Rao, Kasturi V. Bangera, G. K. Shivakumar

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

p-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I-V and C-V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge density and thickness of the depletion region in the heterojunction. The bandgap and activation energies of n-ZnSe and p-ZnTe were also determined and a theoretical band diagram of p-ZnTe/n-ZnSe heterojunction was drawn based on Anderson's model.

Original languageEnglish
Pages (from-to)787-790
Number of pages4
JournalSolid-State Electronics
Volume54
Issue number8
DOIs
Publication statusPublished - 01-08-2010

Fingerprint

Heterojunctions
heterojunctions
Diodes
diodes
Vacuum
vacuum
Vacuum deposition
vacuum deposition
Charge density
Electric space charge
space charge
depletion
Energy gap
Activation energy
diagrams
activation energy
conduction
energy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Rao, Gowrish K. ; Bangera, Kasturi V. ; Shivakumar, G. K. / Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes. In: Solid-State Electronics. 2010 ; Vol. 54, No. 8. pp. 787-790.
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Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes. / Rao, Gowrish K.; Bangera, Kasturi V.; Shivakumar, G. K.

In: Solid-State Electronics, Vol. 54, No. 8, 01.08.2010, p. 787-790.

Research output: Contribution to journalArticle

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