Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes

Gowrish K. Rao, Kasturi V. Bangera, G. K. Shivakumar

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14 Citations (Scopus)


p-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I-V and C-V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge density and thickness of the depletion region in the heterojunction. The bandgap and activation energies of n-ZnSe and p-ZnTe were also determined and a theoretical band diagram of p-ZnTe/n-ZnSe heterojunction was drawn based on Anderson's model.

Original languageEnglish
Pages (from-to)787-790
Number of pages4
JournalSolid-State Electronics
Issue number8
Publication statusPublished - 01-08-2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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