Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes

Gowrish K. Rao; Kasturi V. Bangera; G. K. Shivakumar

doi:10.1016/j.sse.2010.03.013

Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes

Gowrish K. Rao, Kasturi V. Bangera, G. K. Shivakumar

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

p-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I-V and C-V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge density and thickness of the depletion region in the heterojunction. The bandgap and activation energies of n-ZnSe and p-ZnTe were also determined and a theoretical band diagram of p-ZnTe/n-ZnSe heterojunction was drawn based on Anderson's model.

Original language	English
Pages (from-to)	787-790
Number of pages	4
Journal	Solid-State Electronics
Volume	54
Issue number	8
DOIs	https://doi.org/10.1016/j.sse.2010.03.013
Publication status	Published - 01-08-2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2010.03.013

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abstract = "p-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I-V and C-V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge density and thickness of the depletion region in the heterojunction. The bandgap and activation energies of n-ZnSe and p-ZnTe were also determined and a theoretical band diagram of p-ZnTe/n-ZnSe heterojunction was drawn based on Anderson's model.",

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AU - Rao, Gowrish K.

AU - Bangera, Kasturi V.

AU - Shivakumar, G. K.

PY - 2010/8/1

Y1 - 2010/8/1

N2 - p-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I-V and C-V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge density and thickness of the depletion region in the heterojunction. The bandgap and activation energies of n-ZnSe and p-ZnTe were also determined and a theoretical band diagram of p-ZnTe/n-ZnSe heterojunction was drawn based on Anderson's model.

AB - p-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I-V and C-V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge density and thickness of the depletion region in the heterojunction. The bandgap and activation energies of n-ZnSe and p-ZnTe were also determined and a theoretical band diagram of p-ZnTe/n-ZnSe heterojunction was drawn based on Anderson's model.

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JO - Solid-State Electronics

JF - Solid-State Electronics

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ER -

Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes

Abstract

All Science Journal Classification (ASJC) codes

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