Surface modification induced photoluminescence enhancement of GaN nanowall network grown on c-sapphire

Varun Thakur, Sanjay Kumar Nayak, Kodihalli Keeriti Nagaraja, Sonnada Math Shivaprasad

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Surface nitridation of the c-sapphire substrate is used to improve the optical and structural quality of a GaN nanowall network film grown by plasma assisted molecular beam epitaxy. The nitridation results in the formation of a thin AlN layer on the sapphire surface. Several in-situ and ex-situ characterization are complementarily used to probe the changes in epitaxial growth, band edge emission and strain in the films. The GaN nanowall network layer formed on the pre-nitrided substrate shows a two order higher intensity of band edge luminescence than that of a GaN epilayer, demonstrating its potential for light-emission applications.

Original languageEnglish
Pages (from-to)398-403
Number of pages6
JournalElectronic Materials Letters
Volume11
Issue number3
DOIs
Publication statusPublished - 30-05-2015

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Nitridation
Aluminum Oxide
Sapphire
Surface treatment
Photoluminescence
Network layers
Epilayers
Light emission
Substrates
Epitaxial growth
Molecular beam epitaxy
Luminescence
Plasmas

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Thakur, Varun ; Nayak, Sanjay Kumar ; Nagaraja, Kodihalli Keeriti ; Shivaprasad, Sonnada Math. / Surface modification induced photoluminescence enhancement of GaN nanowall network grown on c-sapphire. In: Electronic Materials Letters. 2015 ; Vol. 11, No. 3. pp. 398-403.
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Surface modification induced photoluminescence enhancement of GaN nanowall network grown on c-sapphire. / Thakur, Varun; Nayak, Sanjay Kumar; Nagaraja, Kodihalli Keeriti; Shivaprasad, Sonnada Math.

In: Electronic Materials Letters, Vol. 11, No. 3, 30.05.2015, p. 398-403.

Research output: Contribution to journalArticle

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