Surface modification induced photoluminescence enhancement of GaN nanowall network grown on c-sapphire

Varun Thakur, Sanjay Kumar Nayak, Kodihalli Keeriti Nagaraja, Sonnada Math Shivaprasad

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Surface nitridation of the c-sapphire substrate is used to improve the optical and structural quality of a GaN nanowall network film grown by plasma assisted molecular beam epitaxy. The nitridation results in the formation of a thin AlN layer on the sapphire surface. Several in-situ and ex-situ characterization are complementarily used to probe the changes in epitaxial growth, band edge emission and strain in the films. The GaN nanowall network layer formed on the pre-nitrided substrate shows a two order higher intensity of band edge luminescence than that of a GaN epilayer, demonstrating its potential for light-emission applications.

Original languageEnglish
Pages (from-to)398-403
Number of pages6
JournalElectronic Materials Letters
Issue number3
Publication statusPublished - 30-05-2015


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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