Synthesis, growth and characterization of a long-chain π-conjugation based methoxy chalcone derivative single crystal; a third order nonlinear optical material for optical limiting applications

Organic material (chalcone derivative 4-[(1E)-3-(4-methoxyphenyl)-3-oxoprop-1-en-1-yl]phenyl 4-methylbenzene-1-sulfonate {4MPMS}) has been grown by solvent evaporation technique. The structural properties have been carried out by powder XRD and single crystal XRD data. The linear optical properties (band gap, extinction co-efficient, optical conductivity and complex dielectric constant) were studied by UV-VIS-NIR spectrometer. In addition, defect states were identified and analyzed by creation of color center mechanism using photoluminescence spectroscopy. In Thermal analysis, crystal (4MPMS) is found to be stable up to 158 °C. Hence it may be used for the fabrication of device below the melting point. The electrical properties (dielectric constant and dielectric loss factor) have been carried out. The electronic polarizability is the major contribution for the high frequency dielectric constant values. Therefore, using theoretical aspects, the electronic polarizability values were calculated using Clausius–Mossotti relation as well as band structure approach of Penn model. Laser damage threshold for 4MPMS crystal was determined by using Nd:YAG laser with 532 nm. The nonlinear optical absorption coefficient and third order nonlinear optical susceptibility (χ ⁽³⁾ ) values are reasonably larger than those of the other chalcone derivative crystals. High second order molecular hyperpolarizability enhances the third order optical nonlinear efficiency. Increased χ ⁽³⁾ and coupling factor (less than 1/3) indicates that the optical nonlinearity is electronic in origin. The behavior of nonlinear optical absorption curve confirms that the mechanism belongs to reverse saturable absorption (RSA).