Temperature dependent transport properties of CuInSe2-ZnO heterostructure solar Cell

Dhananjay, J. Nagaraju, S. B. Krupanidhi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Experimental study of dc and ac transport properties of CuInSe2/ZnO heterostructure is presented. The current-voltage (I-V) and frequency dependent capacitance (C-f) characteristics of CuInSe2/ZnO heterostructure were investigated in the temperature range 160-393 K. The heterostructure showed non-ideal behavior of I-V characteristics with an ideality factor of 3.0 at room temperature. Temperature dependent dc conductivity studies exhibited Arrhenius type behavior and revealed the presence of trap level. The C-2-V plot measured at frequency 50 kHz had shown non-linear behavior. An increase in capacitance with temperature was observed. The capacitance-frequency characteristics exhibited a transition between low frequency and the high frequency capacitance. As the temperature was lowered the transition occurred at lower frequencies. The frequency and temperature dependent device capacitance had shown a defect state having activation energy of 108 meV.

Original languageEnglish
Pages (from-to)1636-1642
Number of pages7
JournalJournal of Physics and Chemistry of Solids
Volume67
Issue number8
DOIs
Publication statusPublished - 01-08-2006

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Temperature dependent transport properties of CuInSe<sub>2</sub>-ZnO heterostructure solar Cell'. Together they form a unique fingerprint.

  • Cite this