Temperature dependent transport properties of CuInSe2-ZnO heterostructure solar Cell

Dhananjay, J. Nagaraju, S. B. Krupanidhi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Experimental study of dc and ac transport properties of CuInSe2/ZnO heterostructure is presented. The current-voltage (I-V) and frequency dependent capacitance (C-f) characteristics of CuInSe2/ZnO heterostructure were investigated in the temperature range 160-393 K. The heterostructure showed non-ideal behavior of I-V characteristics with an ideality factor of 3.0 at room temperature. Temperature dependent dc conductivity studies exhibited Arrhenius type behavior and revealed the presence of trap level. The C-2-V plot measured at frequency 50 kHz had shown non-linear behavior. An increase in capacitance with temperature was observed. The capacitance-frequency characteristics exhibited a transition between low frequency and the high frequency capacitance. As the temperature was lowered the transition occurred at lower frequencies. The frequency and temperature dependent device capacitance had shown a defect state having activation energy of 108 meV.

Original languageEnglish
Pages (from-to)1636-1642
Number of pages7
JournalJournal of Physics and Chemistry of Solids
Volume67
Issue number8
DOIs
Publication statusPublished - 01-08-2006

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Transport properties
Heterojunctions
Solar cells
solar cells
transport properties
capacitance
Capacitance
Temperature
temperature
low frequencies
plots
traps
activation energy
Activation energy
conductivity
defects
electric potential
room temperature
Defects
Electric potential

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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abstract = "Experimental study of dc and ac transport properties of CuInSe2/ZnO heterostructure is presented. The current-voltage (I-V) and frequency dependent capacitance (C-f) characteristics of CuInSe2/ZnO heterostructure were investigated in the temperature range 160-393 K. The heterostructure showed non-ideal behavior of I-V characteristics with an ideality factor of 3.0 at room temperature. Temperature dependent dc conductivity studies exhibited Arrhenius type behavior and revealed the presence of trap level. The C-2-V plot measured at frequency 50 kHz had shown non-linear behavior. An increase in capacitance with temperature was observed. The capacitance-frequency characteristics exhibited a transition between low frequency and the high frequency capacitance. As the temperature was lowered the transition occurred at lower frequencies. The frequency and temperature dependent device capacitance had shown a defect state having activation energy of 108 meV.",
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Temperature dependent transport properties of CuInSe2-ZnO heterostructure solar Cell. / Dhananjay; Nagaraju, J.; Krupanidhi, S. B.

In: Journal of Physics and Chemistry of Solids, Vol. 67, No. 8, 01.08.2006, p. 1636-1642.

Research output: Contribution to journalArticle

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AB - Experimental study of dc and ac transport properties of CuInSe2/ZnO heterostructure is presented. The current-voltage (I-V) and frequency dependent capacitance (C-f) characteristics of CuInSe2/ZnO heterostructure were investigated in the temperature range 160-393 K. The heterostructure showed non-ideal behavior of I-V characteristics with an ideality factor of 3.0 at room temperature. Temperature dependent dc conductivity studies exhibited Arrhenius type behavior and revealed the presence of trap level. The C-2-V plot measured at frequency 50 kHz had shown non-linear behavior. An increase in capacitance with temperature was observed. The capacitance-frequency characteristics exhibited a transition between low frequency and the high frequency capacitance. As the temperature was lowered the transition occurred at lower frequencies. The frequency and temperature dependent device capacitance had shown a defect state having activation energy of 108 meV.

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