Experimental study of dc and ac transport properties of CuInSe2/ZnO heterostructure is presented. The current-voltage (I-V) and frequency dependent capacitance (C-f) characteristics of CuInSe2/ZnO heterostructure were investigated in the temperature range 160-393 K. The heterostructure showed non-ideal behavior of I-V characteristics with an ideality factor of 3.0 at room temperature. Temperature dependent dc conductivity studies exhibited Arrhenius type behavior and revealed the presence of trap level. The C-2-V plot measured at frequency 50 kHz had shown non-linear behavior. An increase in capacitance with temperature was observed. The capacitance-frequency characteristics exhibited a transition between low frequency and the high frequency capacitance. As the temperature was lowered the transition occurred at lower frequencies. The frequency and temperature dependent device capacitance had shown a defect state having activation energy of 108 meV.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics