The effect of 8 MeV electron beam irradiation on the structural, optical and photoluminescence properties of ZnS thin films

K. Priya, Gowrish K. Rao, V. K. Ashith, Ganesh Sanjeev, Vijay Pal Verma, Vikash Chandra Petwal, Jishnu Dwivedi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The thermal deposited ZnS thin films with thickness ranging from 400 nm to 1000 nm were irradiated with various doses of 8 MeV electrons. The structural, optical and photoluminescence properties of the irradiated films were studied in detail. The films with thickness ranging from 600 nm to 650 nm were found to have highest tolerance to irradiation. The crystallite size of these films increased after irradiation. The irradiated films were also found to have high absorption in the UV region and their bandgap showed only marginal variation of 2.57%. The photoluminescence spectra of the films were unaffected by irradiation, confirming the stability of their energy band structure. Thus, the thermal deposited ZnS films were found to be highly suitable for UV photo-detection in the radiation environment.

Original languageEnglish
Pages (from-to)2576-2583
Number of pages8
JournalCeramics International
Volume45
Issue number2
DOIs
Publication statusPublished - 01-02-2019

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Electron beams
Photoluminescence
Irradiation
Thin films
Band structure
Crystallite size
Energy gap
Radiation
Electrons
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Priya, K. ; Rao, Gowrish K. ; Ashith, V. K. ; Sanjeev, Ganesh ; Verma, Vijay Pal ; Petwal, Vikash Chandra ; Dwivedi, Jishnu. / The effect of 8 MeV electron beam irradiation on the structural, optical and photoluminescence properties of ZnS thin films. In: Ceramics International. 2019 ; Vol. 45, No. 2. pp. 2576-2583.
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The effect of 8 MeV electron beam irradiation on the structural, optical and photoluminescence properties of ZnS thin films. / Priya, K.; Rao, Gowrish K.; Ashith, V. K.; Sanjeev, Ganesh; Verma, Vijay Pal; Petwal, Vikash Chandra; Dwivedi, Jishnu.

In: Ceramics International, Vol. 45, No. 2, 01.02.2019, p. 2576-2583.

Research output: Contribution to journalArticle

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T1 - The effect of 8 MeV electron beam irradiation on the structural, optical and photoluminescence properties of ZnS thin films

AU - Priya, K.

AU - Rao, Gowrish K.

AU - Ashith, V. K.

AU - Sanjeev, Ganesh

AU - Verma, Vijay Pal

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AB - The thermal deposited ZnS thin films with thickness ranging from 400 nm to 1000 nm were irradiated with various doses of 8 MeV electrons. The structural, optical and photoluminescence properties of the irradiated films were studied in detail. The films with thickness ranging from 600 nm to 650 nm were found to have highest tolerance to irradiation. The crystallite size of these films increased after irradiation. The irradiated films were also found to have high absorption in the UV region and their bandgap showed only marginal variation of 2.57%. The photoluminescence spectra of the films were unaffected by irradiation, confirming the stability of their energy band structure. Thus, the thermal deposited ZnS films were found to be highly suitable for UV photo-detection in the radiation environment.

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