The low and high temperature thermoelectric properties of Sb doped Cu2SnSe3

Shyam Prasad K, Ashok Rao, Bhasker Gahtori, Sivaiah Bathula, Ajay Dhar, Jia Shiun Du, Yung Kang Kuo

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The effect of Sb doping on the thermoelectric properties of Cu2SnSe3 was investigated. The Cu2Sn1 - xSbxSe3 (0 ≤ x ≤ 0.04) compounds were prepared by solid state synthesis. The powder X-ray diffraction pattern of the samples showed a cubic structure (space group F43m). The electrical resistivity decreased with increase in Sb content up to x = 0.02, then it increased with further increase in x. The electrical resistivity data follows variable hopping model at low temperatures. The Seebeck coefficient for all the samples is positive and analysis of data confirms that the variable hopping process is operative at low temperatures. The thermal conductivity is found to decrease with increase in Sb concentration, presumably due to point-defect scattering as a result of Sb substitution. The highest value of figure of merit at 400 K is equal to 0.0137 for the sample Cu2Sn0.99Sb0.01Se3 which is about eight times greater than that of the pristine sample.

Original languageEnglish
Pages (from-to)160-166
Number of pages7
JournalMaterials Research Bulletin
Volume83
DOIs
Publication statusPublished - 01-11-2016

Fingerprint

Seebeck coefficient
Point defects
Diffraction patterns
Thermal conductivity
Substitution reactions
Doping (additives)
Scattering
Powders
X rays
Temperature
electrical resistivity
Seebeck effect
figure of merit
point defects
thermal conductivity
diffraction patterns
substitutes
solid state
synthesis
scattering

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Prasad K, Shyam ; Rao, Ashok ; Gahtori, Bhasker ; Bathula, Sivaiah ; Dhar, Ajay ; Du, Jia Shiun ; Kuo, Yung Kang. / The low and high temperature thermoelectric properties of Sb doped Cu2SnSe3. In: Materials Research Bulletin. 2016 ; Vol. 83. pp. 160-166.
@article{560c5ebc3dbc443195bc7223bf36d7c4,
title = "The low and high temperature thermoelectric properties of Sb doped Cu2SnSe3",
abstract = "The effect of Sb doping on the thermoelectric properties of Cu2SnSe3 was investigated. The Cu2Sn1 - xSbxSe3 (0 ≤ x ≤ 0.04) compounds were prepared by solid state synthesis. The powder X-ray diffraction pattern of the samples showed a cubic structure (space group F43m). The electrical resistivity decreased with increase in Sb content up to x = 0.02, then it increased with further increase in x. The electrical resistivity data follows variable hopping model at low temperatures. The Seebeck coefficient for all the samples is positive and analysis of data confirms that the variable hopping process is operative at low temperatures. The thermal conductivity is found to decrease with increase in Sb concentration, presumably due to point-defect scattering as a result of Sb substitution. The highest value of figure of merit at 400 K is equal to 0.0137 for the sample Cu2Sn0.99Sb0.01Se3 which is about eight times greater than that of the pristine sample.",
author = "{Prasad K}, Shyam and Ashok Rao and Bhasker Gahtori and Sivaiah Bathula and Ajay Dhar and Du, {Jia Shiun} and Kuo, {Yung Kang}",
year = "2016",
month = "11",
day = "1",
doi = "10.1016/j.materresbull.2016.06.002",
language = "English",
volume = "83",
pages = "160--166",
journal = "Materials Research Bulletin",
issn = "0025-5408",
publisher = "Elsevier Limited",

}

The low and high temperature thermoelectric properties of Sb doped Cu2SnSe3. / Prasad K, Shyam; Rao, Ashok; Gahtori, Bhasker; Bathula, Sivaiah; Dhar, Ajay; Du, Jia Shiun; Kuo, Yung Kang.

In: Materials Research Bulletin, Vol. 83, 01.11.2016, p. 160-166.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The low and high temperature thermoelectric properties of Sb doped Cu2SnSe3

AU - Prasad K, Shyam

AU - Rao, Ashok

AU - Gahtori, Bhasker

AU - Bathula, Sivaiah

AU - Dhar, Ajay

AU - Du, Jia Shiun

AU - Kuo, Yung Kang

PY - 2016/11/1

Y1 - 2016/11/1

N2 - The effect of Sb doping on the thermoelectric properties of Cu2SnSe3 was investigated. The Cu2Sn1 - xSbxSe3 (0 ≤ x ≤ 0.04) compounds were prepared by solid state synthesis. The powder X-ray diffraction pattern of the samples showed a cubic structure (space group F43m). The electrical resistivity decreased with increase in Sb content up to x = 0.02, then it increased with further increase in x. The electrical resistivity data follows variable hopping model at low temperatures. The Seebeck coefficient for all the samples is positive and analysis of data confirms that the variable hopping process is operative at low temperatures. The thermal conductivity is found to decrease with increase in Sb concentration, presumably due to point-defect scattering as a result of Sb substitution. The highest value of figure of merit at 400 K is equal to 0.0137 for the sample Cu2Sn0.99Sb0.01Se3 which is about eight times greater than that of the pristine sample.

AB - The effect of Sb doping on the thermoelectric properties of Cu2SnSe3 was investigated. The Cu2Sn1 - xSbxSe3 (0 ≤ x ≤ 0.04) compounds were prepared by solid state synthesis. The powder X-ray diffraction pattern of the samples showed a cubic structure (space group F43m). The electrical resistivity decreased with increase in Sb content up to x = 0.02, then it increased with further increase in x. The electrical resistivity data follows variable hopping model at low temperatures. The Seebeck coefficient for all the samples is positive and analysis of data confirms that the variable hopping process is operative at low temperatures. The thermal conductivity is found to decrease with increase in Sb concentration, presumably due to point-defect scattering as a result of Sb substitution. The highest value of figure of merit at 400 K is equal to 0.0137 for the sample Cu2Sn0.99Sb0.01Se3 which is about eight times greater than that of the pristine sample.

UR - http://www.scopus.com/inward/record.url?scp=84975065641&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84975065641&partnerID=8YFLogxK

U2 - 10.1016/j.materresbull.2016.06.002

DO - 10.1016/j.materresbull.2016.06.002

M3 - Article

AN - SCOPUS:84975065641

VL - 83

SP - 160

EP - 166

JO - Materials Research Bulletin

JF - Materials Research Bulletin

SN - 0025-5408

ER -