The p-type doping of vacuum deposited ZnTe thin films with bismuth by a new technique of using nano-spheres

Gowrish K. Rao, G. K. Shivakumar, V. B. Kasturi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The present paper reports the successful doping of vacuum evaporated zinc telluride (ZnTe) thin films with bismuth by a new technique of using nano-spheres. The discontinuous films of bismuth (the dopant material), containing bismuth in the form of nano-spheres, were prepared by vacuum evaporation and the ZnTe films were then deposited on top of them. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques were used to ascertain the formation of discontinuous bismuth films and the proper diffusion of bismuth in ZnTe films, respectively. After doping, the carrier concentration of the ZnTe films was found to increase by an order of the magnitude. The electrical conductivity also improved significantly. The photoconductivity and photo-response properties of the doped films were also analysed.

Original languageEnglish
Pages (from-to)185-188
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume175
Issue number2
DOIs
Publication statusPublished - 25-11-2010

Fingerprint

zinc tellurides
Bismuth
bismuth
Zinc
Doping (additives)
Vacuum
Thin films
vacuum
thin films
Vacuum evaporation
Photoconductivity
photoconductivity
Carrier concentration
evaporation
X ray diffraction
Scanning electron microscopy
electrical resistivity
scanning electron microscopy
diffraction
x rays

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

@article{647ed8722e3149ef946dcb19e484e622,
title = "The p-type doping of vacuum deposited ZnTe thin films with bismuth by a new technique of using nano-spheres",
abstract = "The present paper reports the successful doping of vacuum evaporated zinc telluride (ZnTe) thin films with bismuth by a new technique of using nano-spheres. The discontinuous films of bismuth (the dopant material), containing bismuth in the form of nano-spheres, were prepared by vacuum evaporation and the ZnTe films were then deposited on top of them. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques were used to ascertain the formation of discontinuous bismuth films and the proper diffusion of bismuth in ZnTe films, respectively. After doping, the carrier concentration of the ZnTe films was found to increase by an order of the magnitude. The electrical conductivity also improved significantly. The photoconductivity and photo-response properties of the doped films were also analysed.",
author = "Rao, {Gowrish K.} and Shivakumar, {G. K.} and Kasturi, {V. B.}",
year = "2010",
month = "11",
day = "25",
doi = "10.1016/j.mseb.2010.07.012",
language = "English",
volume = "175",
pages = "185--188",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "2",

}

The p-type doping of vacuum deposited ZnTe thin films with bismuth by a new technique of using nano-spheres. / Rao, Gowrish K.; Shivakumar, G. K.; Kasturi, V. B.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 175, No. 2, 25.11.2010, p. 185-188.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The p-type doping of vacuum deposited ZnTe thin films with bismuth by a new technique of using nano-spheres

AU - Rao, Gowrish K.

AU - Shivakumar, G. K.

AU - Kasturi, V. B.

PY - 2010/11/25

Y1 - 2010/11/25

N2 - The present paper reports the successful doping of vacuum evaporated zinc telluride (ZnTe) thin films with bismuth by a new technique of using nano-spheres. The discontinuous films of bismuth (the dopant material), containing bismuth in the form of nano-spheres, were prepared by vacuum evaporation and the ZnTe films were then deposited on top of them. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques were used to ascertain the formation of discontinuous bismuth films and the proper diffusion of bismuth in ZnTe films, respectively. After doping, the carrier concentration of the ZnTe films was found to increase by an order of the magnitude. The electrical conductivity also improved significantly. The photoconductivity and photo-response properties of the doped films were also analysed.

AB - The present paper reports the successful doping of vacuum evaporated zinc telluride (ZnTe) thin films with bismuth by a new technique of using nano-spheres. The discontinuous films of bismuth (the dopant material), containing bismuth in the form of nano-spheres, were prepared by vacuum evaporation and the ZnTe films were then deposited on top of them. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques were used to ascertain the formation of discontinuous bismuth films and the proper diffusion of bismuth in ZnTe films, respectively. After doping, the carrier concentration of the ZnTe films was found to increase by an order of the magnitude. The electrical conductivity also improved significantly. The photoconductivity and photo-response properties of the doped films were also analysed.

UR - http://www.scopus.com/inward/record.url?scp=77957860664&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957860664&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2010.07.012

DO - 10.1016/j.mseb.2010.07.012

M3 - Article

VL - 175

SP - 185

EP - 188

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 2

ER -