Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique

Sajan D. George, P. Radhakrishnan, V. P N Nampoori, C. P G Vallabhan

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S. Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors.

Original languageEnglish
Pages (from-to)990-993
Number of pages4
JournalJournal of Physics D: Applied Physics
Volume36
Issue number8
DOIs
Publication statusPublished - 21-04-2003

Fingerprint

Photoacoustic effect
Thermal diffusivity
thermal diffusivity
Semiconductor materials
heat transfer
Doping (additives)
Heat transfer
Hot Temperature
evaluation
cells

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

George, Sajan D. ; Radhakrishnan, P. ; Nampoori, V. P N ; Vallabhan, C. P G. / Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique. In: Journal of Physics D: Applied Physics. 2003 ; Vol. 36, No. 8. pp. 990-993.
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Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique. / George, Sajan D.; Radhakrishnan, P.; Nampoori, V. P N; Vallabhan, C. P G.

In: Journal of Physics D: Applied Physics, Vol. 36, No. 8, 21.04.2003, p. 990-993.

Research output: Contribution to journalArticle

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