Thickness and oxygen partial pressure dependence on optical band gap of indium oxide by reactive evaporation method

A. V.Muhammed Ali, Dhananjaya Kekuda

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Indium oxide film is deposited by reactive evaporation of indium in the presence of oxygen gas onto an unheated glass substrate. It was found that thickness of the film and partial oxygen pressure during the deposition affects the optical properties of the indium oxide thin film. We studied the optical band gap for different thickness and partial pressure keeping a constant annealing temperature. It was found that the band gap varies from 3.5 to 3.8eV, as thickness of the film increased. The band gap energy had also shows the similar trend and it was also studied as a function of annealing temperature. A systematic investigation of the optical band gap as a function of thickness and oxygen partial pressure at different annealing temperature was carried out.

Original languageEnglish
Article number012027
JournalIOP Conference Series: Materials Science and Engineering
Volume73
Issue number1
DOIs
Publication statusPublished - 01-01-2015

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Optical band gaps
Partial pressure
Indium
Evaporation
Annealing
Oxygen
Oxide films
Oxides
Energy gap
Temperature
Optical properties
Gases
Glass
Thin films
Substrates
indium oxide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

Cite this

@article{061955ff121149948734853febaf7408,
title = "Thickness and oxygen partial pressure dependence on optical band gap of indium oxide by reactive evaporation method",
abstract = "Indium oxide film is deposited by reactive evaporation of indium in the presence of oxygen gas onto an unheated glass substrate. It was found that thickness of the film and partial oxygen pressure during the deposition affects the optical properties of the indium oxide thin film. We studied the optical band gap for different thickness and partial pressure keeping a constant annealing temperature. It was found that the band gap varies from 3.5 to 3.8eV, as thickness of the film increased. The band gap energy had also shows the similar trend and it was also studied as a function of annealing temperature. A systematic investigation of the optical band gap as a function of thickness and oxygen partial pressure at different annealing temperature was carried out.",
author = "Ali, {A. V.Muhammed} and Dhananjaya Kekuda",
year = "2015",
month = "1",
day = "1",
doi = "10.1088/1757-899X/73/1/012027",
language = "English",
volume = "73",
journal = "IOP Conference Series: Materials Science and Engineering",
issn = "1757-8981",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Thickness and oxygen partial pressure dependence on optical band gap of indium oxide by reactive evaporation method

AU - Ali, A. V.Muhammed

AU - Kekuda, Dhananjaya

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Indium oxide film is deposited by reactive evaporation of indium in the presence of oxygen gas onto an unheated glass substrate. It was found that thickness of the film and partial oxygen pressure during the deposition affects the optical properties of the indium oxide thin film. We studied the optical band gap for different thickness and partial pressure keeping a constant annealing temperature. It was found that the band gap varies from 3.5 to 3.8eV, as thickness of the film increased. The band gap energy had also shows the similar trend and it was also studied as a function of annealing temperature. A systematic investigation of the optical band gap as a function of thickness and oxygen partial pressure at different annealing temperature was carried out.

AB - Indium oxide film is deposited by reactive evaporation of indium in the presence of oxygen gas onto an unheated glass substrate. It was found that thickness of the film and partial oxygen pressure during the deposition affects the optical properties of the indium oxide thin film. We studied the optical band gap for different thickness and partial pressure keeping a constant annealing temperature. It was found that the band gap varies from 3.5 to 3.8eV, as thickness of the film increased. The band gap energy had also shows the similar trend and it was also studied as a function of annealing temperature. A systematic investigation of the optical band gap as a function of thickness and oxygen partial pressure at different annealing temperature was carried out.

UR - http://www.scopus.com/inward/record.url?scp=84923261447&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84923261447&partnerID=8YFLogxK

U2 - 10.1088/1757-899X/73/1/012027

DO - 10.1088/1757-899X/73/1/012027

M3 - Conference article

AN - SCOPUS:84923261447

VL - 73

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

SN - 1757-8981

IS - 1

M1 - 012027

ER -