Thickness and oxygen partial pressure dependence on optical band gap of indium oxide by reactive evaporation method

A. V. Muhammed Ali, Dhananjaya Kekuda

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Indium oxide film is deposited by reactive evaporation of indium in the presence of oxygen gas onto an unheated glass substrate. It was found that thickness of the film and partial oxygen pressure during the deposition affects the optical propedies of the indium oxide thin film. We studied the optical band gap for different thickness and partial pressure keeping a comtant annealing temperature. It was found that the band gap varies from 3.5-3.8 eV, as thickness of the film increased. The band gap energy had also shows the similar trend and it was also studied as a function of annealing temperature. A systematic investigation of the optical band gap as a function of thickness and oxygen partial pressure at dfferent annealing temperature was carried out.

Original languageEnglish
Pages (from-to)1718-1721
Number of pages4
JournalJournal of Applied Sciences
Volume12
Issue number16
DOIs
Publication statusPublished - 19-09-2012

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indium oxides
pressure dependence
partial pressure
evaporation
oxygen
annealing
temperature
indium
oxide films
trends
glass
thin films
gases

All Science Journal Classification (ASJC) codes

  • General

Cite this

@article{57ab35bdb02f4ffdafaee1ef020403c1,
title = "Thickness and oxygen partial pressure dependence on optical band gap of indium oxide by reactive evaporation method",
abstract = "Indium oxide film is deposited by reactive evaporation of indium in the presence of oxygen gas onto an unheated glass substrate. It was found that thickness of the film and partial oxygen pressure during the deposition affects the optical propedies of the indium oxide thin film. We studied the optical band gap for different thickness and partial pressure keeping a comtant annealing temperature. It was found that the band gap varies from 3.5-3.8 eV, as thickness of the film increased. The band gap energy had also shows the similar trend and it was also studied as a function of annealing temperature. A systematic investigation of the optical band gap as a function of thickness and oxygen partial pressure at dfferent annealing temperature was carried out.",
author = "{Muhammed Ali}, {A. V.} and Dhananjaya Kekuda",
year = "2012",
month = "9",
day = "19",
doi = "10.3923/jas.2012.1718.1721",
language = "English",
volume = "12",
pages = "1718--1721",
journal = "Asian Journal of Applied Sciences",
issn = "1996-3343",
publisher = "Science Alert",
number = "16",

}

Thickness and oxygen partial pressure dependence on optical band gap of indium oxide by reactive evaporation method. / Muhammed Ali, A. V.; Kekuda, Dhananjaya.

In: Journal of Applied Sciences, Vol. 12, No. 16, 19.09.2012, p. 1718-1721.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thickness and oxygen partial pressure dependence on optical band gap of indium oxide by reactive evaporation method

AU - Muhammed Ali, A. V.

AU - Kekuda, Dhananjaya

PY - 2012/9/19

Y1 - 2012/9/19

N2 - Indium oxide film is deposited by reactive evaporation of indium in the presence of oxygen gas onto an unheated glass substrate. It was found that thickness of the film and partial oxygen pressure during the deposition affects the optical propedies of the indium oxide thin film. We studied the optical band gap for different thickness and partial pressure keeping a comtant annealing temperature. It was found that the band gap varies from 3.5-3.8 eV, as thickness of the film increased. The band gap energy had also shows the similar trend and it was also studied as a function of annealing temperature. A systematic investigation of the optical band gap as a function of thickness and oxygen partial pressure at dfferent annealing temperature was carried out.

AB - Indium oxide film is deposited by reactive evaporation of indium in the presence of oxygen gas onto an unheated glass substrate. It was found that thickness of the film and partial oxygen pressure during the deposition affects the optical propedies of the indium oxide thin film. We studied the optical band gap for different thickness and partial pressure keeping a comtant annealing temperature. It was found that the band gap varies from 3.5-3.8 eV, as thickness of the film increased. The band gap energy had also shows the similar trend and it was also studied as a function of annealing temperature. A systematic investigation of the optical band gap as a function of thickness and oxygen partial pressure at dfferent annealing temperature was carried out.

UR - http://www.scopus.com/inward/record.url?scp=84866254068&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866254068&partnerID=8YFLogxK

U2 - 10.3923/jas.2012.1718.1721

DO - 10.3923/jas.2012.1718.1721

M3 - Article

AN - SCOPUS:84866254068

VL - 12

SP - 1718

EP - 1721

JO - Asian Journal of Applied Sciences

JF - Asian Journal of Applied Sciences

SN - 1996-3343

IS - 16

ER -