Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation

Indudhar Panduranga Vali, Pramoda Kumara Shetty, M. G. Mahesha, V. C. Petwal, Jishnu Dwivedi, R. J. Choudhary

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effect of electron beam irradiation (EBI) on Al/n-Si Schottky diode has been studied by I–V characterization at room temperature. The behavior of the metal-semiconductor (MS) interface is analyzed by means of variations in the MS contact parameters such as, Schottky barrier height (ΦB), ideality factor (n) and series resistance (Rs). These parameters were found to depend on the EBI dose having a fixed incident beam of energy 7.5 MeV. At different doses (500, 1000, 1500 kGy) of EBI, the Schottky contacts were prepared and extracted their contact parameters by applying thermionic emission and Cheung models. Remarkably, the tuning of ΦB was observed as a function of EBI dose. The improved n with increased ΦB is seen for all the EBI doses. As a consequence of which the thermionic emission is more favored. However, the competing transport mechanisms such as space charge limited emission, tunneling and tunneling through the trap states were ascribed due to n > 1. The analysis of XPS spectra have shown the presence of native oxide and increased radiation induced defect states. The thickness variation in the MS interface contributing to Schottky contact behavior is discussed. This study explains a new technique to tune Schottky contact parameters by metal deposition on the electron beam irradiated n-Si wafers.

Original languageEnglish
Pages (from-to)171-176
Number of pages6
JournalApplied Surface Science
Volume407
DOIs
Publication statusPublished - 15-06-2017

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Electron beams
Tuning
Irradiation
Dosimetry
Metals
Thermionic emission
Semiconductor materials
Electric space charge
Oxides
Diodes
X ray photoelectron spectroscopy
Radiation
Defects
Temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Vali, Indudhar Panduranga ; Shetty, Pramoda Kumara ; Mahesha, M. G. ; Petwal, V. C. ; Dwivedi, Jishnu ; Choudhary, R. J. / Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation. In: Applied Surface Science. 2017 ; Vol. 407. pp. 171-176.
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Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation. / Vali, Indudhar Panduranga; Shetty, Pramoda Kumara; Mahesha, M. G.; Petwal, V. C.; Dwivedi, Jishnu; Choudhary, R. J.

In: Applied Surface Science, Vol. 407, 15.06.2017, p. 171-176.

Research output: Contribution to journalArticle

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AU - Vali, Indudhar Panduranga

AU - Shetty, Pramoda Kumara

AU - Mahesha, M. G.

AU - Petwal, V. C.

AU - Dwivedi, Jishnu

AU - Choudhary, R. J.

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AB - The effect of electron beam irradiation (EBI) on Al/n-Si Schottky diode has been studied by I–V characterization at room temperature. The behavior of the metal-semiconductor (MS) interface is analyzed by means of variations in the MS contact parameters such as, Schottky barrier height (ΦB), ideality factor (n) and series resistance (Rs). These parameters were found to depend on the EBI dose having a fixed incident beam of energy 7.5 MeV. At different doses (500, 1000, 1500 kGy) of EBI, the Schottky contacts were prepared and extracted their contact parameters by applying thermionic emission and Cheung models. Remarkably, the tuning of ΦB was observed as a function of EBI dose. The improved n with increased ΦB is seen for all the EBI doses. As a consequence of which the thermionic emission is more favored. However, the competing transport mechanisms such as space charge limited emission, tunneling and tunneling through the trap states were ascribed due to n > 1. The analysis of XPS spectra have shown the presence of native oxide and increased radiation induced defect states. The thickness variation in the MS interface contributing to Schottky contact behavior is discussed. This study explains a new technique to tune Schottky contact parameters by metal deposition on the electron beam irradiated n-Si wafers.

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