TY - JOUR
T1 - Ultraviolet photoconductivity and photoluminescence properties of spray pyrolyzed ZnO nanostructure
T2 - Effect of deposition temperature
AU - Srivathsa, Manu
AU - Kumar, Pawan
AU - Rajendra, B. V.
N1 - Funding Information:
The authors would like to thank. 1. Manipal Academy of Higher Education (MAHE) for providing a research facility. 2. Manu Srivathsa would like to thank UGC-DAE CSR Mumbai Centre for financial assistance (UDCSR/MUM/AO/CRS-M-315/2020/813). 3. Prof. Dr. Sudha D Kamath, Physics Department, M I T, Manipal for providing the photoluminescence facility. 4. Dr. Gowrish Rao K, Physics Department, M I T, Manipal for providing the photo-conductivity measurement facility. 5. Dr. Mahesha M G, Physics Department, M I T, Manipal for providing I–V measurement system.
Funding Information:
2. Manu Srivathsa would like to thank UGC-DAE CSR Mumbai Centre for financial assistance (UDCSR/MUM/AO/CRS-M-315/2020/813).
Publisher Copyright:
© 2022 Elsevier B.V.
PY - 2022/9
Y1 - 2022/9
N2 - The current investigation focuses on the influence of substrate temperature on Zinc Oxide (ZnO) thin films synthesized on glass substrates using 0.1 M precursor solution by low-cost spray pyrolysis technique. The x-ray diffraction peaks matched the hexagonal wurtzite structure of ZnO with the highest intensity along the (1 0 1) plane. Estimated the crystallite size, dislocation density, micro-strain, and the number of crystallites in the deposits using X ray diffraction (XRD) data. The crystallinity of the films deposited at 450 °C was maximum. Fibrous surface morphology is altered by varying the deposition temperature. The enhancement of optical transmittance and energy bandgap of the deposits with deposition temperature. The reduction of Urbach energy with an increase in the substrate temperature confirmed the improvement of crystallinity. The photoluminescence study revealed peaks associated with electron-hole pair recombination, zinc, and oxygen-related defects. The samples deposited at 450 °C showed minimum defects. Commission Internationale de l'éclairage (CIE) chromaticity diagram showed white light emission for sample deposited at 450 °C with the color temperature equal to 5378 °C which is agreeing with the temperature of a normal white light source. Improvement of free carrier concentration and n-type conductivity due to the enhancement of crystallinity was observed. ZnO thin films deposited at 450 °C showed maximum photocurrent when illuminated with UV light and faster rise and fall of photo resistance due to the improvement in the crystallinity and carrier concentration. The maximum photosensitivity was observed for the samples synthesized at 450 °C. Hence the ZnO thin films deposited at 450 °C can be used as ultraviolet photodetector material.
AB - The current investigation focuses on the influence of substrate temperature on Zinc Oxide (ZnO) thin films synthesized on glass substrates using 0.1 M precursor solution by low-cost spray pyrolysis technique. The x-ray diffraction peaks matched the hexagonal wurtzite structure of ZnO with the highest intensity along the (1 0 1) plane. Estimated the crystallite size, dislocation density, micro-strain, and the number of crystallites in the deposits using X ray diffraction (XRD) data. The crystallinity of the films deposited at 450 °C was maximum. Fibrous surface morphology is altered by varying the deposition temperature. The enhancement of optical transmittance and energy bandgap of the deposits with deposition temperature. The reduction of Urbach energy with an increase in the substrate temperature confirmed the improvement of crystallinity. The photoluminescence study revealed peaks associated with electron-hole pair recombination, zinc, and oxygen-related defects. The samples deposited at 450 °C showed minimum defects. Commission Internationale de l'éclairage (CIE) chromaticity diagram showed white light emission for sample deposited at 450 °C with the color temperature equal to 5378 °C which is agreeing with the temperature of a normal white light source. Improvement of free carrier concentration and n-type conductivity due to the enhancement of crystallinity was observed. ZnO thin films deposited at 450 °C showed maximum photocurrent when illuminated with UV light and faster rise and fall of photo resistance due to the improvement in the crystallinity and carrier concentration. The maximum photosensitivity was observed for the samples synthesized at 450 °C. Hence the ZnO thin films deposited at 450 °C can be used as ultraviolet photodetector material.
UR - http://www.scopus.com/inward/record.url?scp=85134585241&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85134585241&partnerID=8YFLogxK
U2 - 10.1016/j.optmat.2022.112726
DO - 10.1016/j.optmat.2022.112726
M3 - Article
AN - SCOPUS:85134585241
SN - 0925-3467
VL - 131
JO - Optical Materials
JF - Optical Materials
M1 - 112726
ER -