Using metal/organic junction engineering to prepare an efficient organic base-modulation triode and its inverter

Shiau Shin Cheng, Jia Hao Chen, Guan Yuan Chen, Dhananjay Kekuda, Meng Chyi Wu, Chih Wei Chu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In this study, we investigated the influence of a buffer layer of molybdic oxide (MoO3) at the metal/organic junction on the behavior of organic base-modulation triodes. The performance of devices featuring MoO3/Al as the emitter electrode was enhanced relative to that of corresponding devices with Au and Ag, presumably because of the reduced in the contact barrier and the prevention of metal diffusion into the organic layer. The device exhibited an output current of -16.1 μA at VB = -5 V and a current ON/OFF ratio of 103. Using this architecture, we constructed resistance-load inverters that exhibited a calculated gain of 6.

Original languageEnglish
Pages (from-to)1636-1640
Number of pages5
JournalOrganic Electronics: physics, materials, applications
Volume10
Issue number8
DOIs
Publication statusPublished - 01-12-2009

Fingerprint

Triodes
triodes
Metals
Modulation
engineering
modulation
Buffer layers
metals
Oxides
inverters
Electrodes
emitters
buffers
electrodes
oxides
output
molybdenum trioxide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Cheng, Shiau Shin ; Chen, Jia Hao ; Chen, Guan Yuan ; Kekuda, Dhananjay ; Wu, Meng Chyi ; Chu, Chih Wei. / Using metal/organic junction engineering to prepare an efficient organic base-modulation triode and its inverter. In: Organic Electronics: physics, materials, applications. 2009 ; Vol. 10, No. 8. pp. 1636-1640.
@article{0a85cbb133134f599202a8af7bdc977a,
title = "Using metal/organic junction engineering to prepare an efficient organic base-modulation triode and its inverter",
abstract = "In this study, we investigated the influence of a buffer layer of molybdic oxide (MoO3) at the metal/organic junction on the behavior of organic base-modulation triodes. The performance of devices featuring MoO3/Al as the emitter electrode was enhanced relative to that of corresponding devices with Au and Ag, presumably because of the reduced in the contact barrier and the prevention of metal diffusion into the organic layer. The device exhibited an output current of -16.1 μA at VB = -5 V and a current ON/OFF ratio of 103. Using this architecture, we constructed resistance-load inverters that exhibited a calculated gain of 6.",
author = "Cheng, {Shiau Shin} and Chen, {Jia Hao} and Chen, {Guan Yuan} and Dhananjay Kekuda and Wu, {Meng Chyi} and Chu, {Chih Wei}",
year = "2009",
month = "12",
day = "1",
doi = "10.1016/j.orgel.2009.08.023",
language = "English",
volume = "10",
pages = "1636--1640",
journal = "Organic Electronics: physics, materials, applications",
issn = "1566-1199",
publisher = "Elsevier",
number = "8",

}

Using metal/organic junction engineering to prepare an efficient organic base-modulation triode and its inverter. / Cheng, Shiau Shin; Chen, Jia Hao; Chen, Guan Yuan; Kekuda, Dhananjay; Wu, Meng Chyi; Chu, Chih Wei.

In: Organic Electronics: physics, materials, applications, Vol. 10, No. 8, 01.12.2009, p. 1636-1640.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Using metal/organic junction engineering to prepare an efficient organic base-modulation triode and its inverter

AU - Cheng, Shiau Shin

AU - Chen, Jia Hao

AU - Chen, Guan Yuan

AU - Kekuda, Dhananjay

AU - Wu, Meng Chyi

AU - Chu, Chih Wei

PY - 2009/12/1

Y1 - 2009/12/1

N2 - In this study, we investigated the influence of a buffer layer of molybdic oxide (MoO3) at the metal/organic junction on the behavior of organic base-modulation triodes. The performance of devices featuring MoO3/Al as the emitter electrode was enhanced relative to that of corresponding devices with Au and Ag, presumably because of the reduced in the contact barrier and the prevention of metal diffusion into the organic layer. The device exhibited an output current of -16.1 μA at VB = -5 V and a current ON/OFF ratio of 103. Using this architecture, we constructed resistance-load inverters that exhibited a calculated gain of 6.

AB - In this study, we investigated the influence of a buffer layer of molybdic oxide (MoO3) at the metal/organic junction on the behavior of organic base-modulation triodes. The performance of devices featuring MoO3/Al as the emitter electrode was enhanced relative to that of corresponding devices with Au and Ag, presumably because of the reduced in the contact barrier and the prevention of metal diffusion into the organic layer. The device exhibited an output current of -16.1 μA at VB = -5 V and a current ON/OFF ratio of 103. Using this architecture, we constructed resistance-load inverters that exhibited a calculated gain of 6.

UR - http://www.scopus.com/inward/record.url?scp=71849087761&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71849087761&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2009.08.023

DO - 10.1016/j.orgel.2009.08.023

M3 - Article

VL - 10

SP - 1636

EP - 1640

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

SN - 1566-1199

IS - 8

ER -