Using metal/organic junction engineering to prepare an efficient organic base-modulation triode and its inverter

Shiau Shin Cheng, Jia Hao Chen, Guan Yuan Chen, Dhananjay Kekuda, Meng Chyi Wu, Chih Wei Chu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In this study, we investigated the influence of a buffer layer of molybdic oxide (MoO3) at the metal/organic junction on the behavior of organic base-modulation triodes. The performance of devices featuring MoO3/Al as the emitter electrode was enhanced relative to that of corresponding devices with Au and Ag, presumably because of the reduced in the contact barrier and the prevention of metal diffusion into the organic layer. The device exhibited an output current of -16.1 μA at VB = -5 V and a current ON/OFF ratio of 103. Using this architecture, we constructed resistance-load inverters that exhibited a calculated gain of 6.

Original languageEnglish
Pages (from-to)1636-1640
Number of pages5
JournalOrganic Electronics: physics, materials, applications
Volume10
Issue number8
DOIs
Publication statusPublished - 01-12-2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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